US2007065345A1PendingUtilityA1
Manufacturable single-chip hydrogen sensor
Est. expiryFeb 18, 2020(expired)· nominal 20-yr term from priority
Inventors:James M. O'Connor
Y10T436/21G01N 33/005Y10T436/11Y10T436/22Y10S438/975G01N 27/125Y10T29/49002
48
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Claims
Abstract
A robust single-chip hydrogen sensor and a method for fabricating such a sensor. By utilizing an interconnect metallization material that is the same or similar to the material used to sense hydrogen, or that is capable of withstanding an etchant used to pattern a hydrogen sensing portion, device yields are improved over prior techniques.
Claims
exact text as granted — not AI-modified1 . A method for fabricating a silicon-based hydrogen sensor, comprising providing an interconnect metallization and a hydrogen sensing portion, wherein the interconnect metallization and the hydrogen sensing portion are both composed of a first material.
2 . The method of claim 1 , wherein the first material is a palladium nickel alloy.
3 . The method of claim 1 , further comprising covering the interconnect metallization with a material selected from the group consisting of an oxide and a nitride.
4 . The method of claim 1 , wherein the silicon-based hydrogen sensor is a single chip sensor comprising a bulk silicon substrate, temperature control means, at least one sense transistor, and at least one sense resistor.
5 . The method of claim 1 , further comprising providing a silicided contact between the interconnect metallization and an underlying base portion.
6 . The method of claim 5 , wherein providing a silicided contact comprises:
masking the underlying base portion; etching a contact portion through the masked underlying base portion; depositing a contact material; sintering the contact material; and removing any unreacted contact material.
7 . The method of claim 6 , wherein the contact material is selected from the group consisting of cobalt, titanium, tungsten, platinum, tantalum, and molybdenum.Join the waitlist — get patent alerts
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