Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor

Abstract

The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device ( 100 ), among other possible elements, includes a silicided gate electrode ( 150 ) located over a substrate ( 110 ), the silicided gate electrode ( 150 ) having gate sidewall spacers ( 160 ) located on sidewalls thereof. The semiconductor device ( 100 ) further includes source/drain regions ( 170 ) located in the substrate ( 110 ) proximate the silicided gate electrode ( 150 ), and silicided source/drain regions ( 180 ) located in the source/drain regions ( 170 ) and at least partially under the gate sidewall spacers ( 160 ).

1 . A semiconductor device, comprising: 
 a silicided gate electrode located over a substrate, said silicided gate electrode having gate sidewall spacers located on sidewalls thereof;    source/drain regions located in said substrate proximate said silicided gate electrode; and    silicided source/drain regions located in said source/drain regions and at least partially under said gate sidewall spacers.    
   
   
       2 . The semiconductor device as recited in  claim 1  wherein said silicided source/drain regions extend from about 2 nm to about 10 nm under said gate sidewall spacers.  
   
   
       3 . The semiconductor device as recited in  claim 1  wherein said silicided source/drain regions have a thickness ranging from about 10 nm to about 30 nm.