Selective consolidation methods for fabricating semiconductor device components and conductive features thereof

Abstract

Methods for forming conductive elements of substrates of components that are configured for use in electronic devices includes providing unconsolidated material over at least a portion of such a substrate and at least partially consolidating the material selectively or in accordance with a program. Such consolidation may be effected by directing consolidating energy, in the form of focused (e.g., laser) radiation or otherwise, toward the unconsolidated material. Additionally, all or part of a substrate may be formed by programmed material consolidation processes.

1 . A method for fabricating a circuit board, comprising: 
 consolidating unconsolidated material over selected regions of a dielectric substrate in accordance with a program to fabricate at least one conductive element on at least the portion of the dielectric substrate.    
     
     
         2 . The method of  claim 1 , further comprising: 
 fabricating at least the portion of the dielectric substrate by a programmed material consolidation technique.    
     
     
         3 . The method of  claim 2 , wherein the acts of fabricating and consolidating are effected in situ.  
     
     
         4 . The method of  claim 1 , wherein consolidating unconsolidated material comprises: 
 forming a first layer of the at least one conductive element from substantially unconsolidated conductive material;    forming at least one additional layer of the at least one conductive element from substantially unconsolidated conductive material; and    permitting or causing the substantially unconsolidated conductive material to at least partially consolidate.    
     
     
         5 . A method for fabricating a component for use in an electronic device, comprising: 
 providing unconsolidated material over at least a portion of a substrate; and    selectively directing consolidating energy toward the unconsolidated material to at least partially consolidate the same at desired locations on the substrate.    
     
     
         6 . The method of  claim 5 , wherein selectively consolidating comprises directing focused consolidating energy toward the unconsolidated material under control of a program.  
     
     
         7 . The method of  claim 5 , wherein selective consolidating comprises directing focused consolidating energy toward to unconsolidated material in response to recognition of a feature of or on the substrate.  
     
     
         8 . The method of  claim 5 , wherein providing comprises providing a layer of unconsolidated material over at least the portion of the substrate.  
     
     
         9 . The method of  claim 8 , including: 
 forming a first layer of the at least one conductive element from substantially unconsolidated conductive material;    forming at least one additional layer of the at least one conductive element from substantially unconsolidated conductive material; and    permitting or causing the substantially unconsolidated conductive material to at least partially consolidate.    
     
     
         10 . The method of  claim 5 , wherein providing comprises providing a radiation-curable polymer over at least the portion of the substrate.  
     
     
         11 . The method of  claim 10 , wherein selectively directing consolidating energy comprises selectively directing a laser beam toward the radiation-curable polymer.  
     
     
         12 . The method of  claim 5 , wherein the acts of providing and selectively directing are effected in situ.  
     
     
         13 . A method of fabricating a carrier substrate, comprising: 
 providing at least a portion of a dielectric substrate;    providing unconsolidated conductive material over at least a portion of the dielectric substrate; and    at least partially consolidating conductive material over selected locations of the dielectric substrate in accordance with a program.    
     
     
         14 . The method of  claim 13 , wherein providing the at least a portion of the dielectric substrate comprises fabricating at least the portion by a programmed material consolidation technique.  
     
     
         15 . The method of  claim 14 , wherein the acts of fabricating at least the portion of the dielectric substrate, providing unconsolidated conductive material, and at least partially consolidating conductive material are effected in situ.  
     
     
         16 . The method of  claim 13 , further comprising: 
 sequentially forming and at least partially consolidating a plurality of regions comprising substantially unconsolidated conductive material.    
     
     
         17 . The method of  claim 16 , wherein sequentially forming and at least partially consolidating comprises sequentially forming and at least partially consolidating a plurality of layers comprising substantially unconsolidated conductive material.  
     
     
         18 . The method of  claim 16 , wherein at least partially consolidating comprises permitting the substantially unconsolidated conductive material to at least partially harden.  
     
     
         19 . The method of  claim 13 , wherein at least partially consolidating comprises exposing at least some of the unconsolidated conductive material to focused energy.  
     
     
         20 . The method of  claim 19 , wherein exposing comprises directing a laser beam onto at least some of the unconsolidated conductive material.