Pixel structure for transflective LCD panel and fabricating method thereof

Abstract

A pixel structure for a transflective LCD having a transparent region and a reflective region is provided. The pixel structure includes a transparent substrate, a TFT, at least one reflective structure, a passivation layer, a pixel electrode and a reflective layer. The TFT is disposed in a reflective region of the transparent substrate. The reflective structure is configured at one side of the TFT, and located in the reflective region of the transparent substrate. The passivation layer is disposed over the transparent substrate and covers the TFT and the reflective structure. The pixel electrode is disposed above the TFT and the reflective structure, and is at least located in a transparent region. The pixel electrode is electrically connected to the TFT. The reflective layer is disposed above the TFT and the reflective structure, and is located in the reflective region.

1 . A pixel structure for a transflective LCD having a transparent region and a reflective region, the pixel structure comprising: 
 a transparent substrate,    a TFT, disposed in the reflective region of the transparent substrate;    at least one reflective structure, configured at one side of the TFT on the transparent substrate, and located in the reflective region of the transparent substrate;    a passivation layer, disposed over the transparent substrate and covering the TFT and the reflective structure;    a pixel electrode, disposed above the TFT and the reflective structure, and at least located in the transparent region, the pixel electrode being electrically connected to the TFT; and    a reflective layer, disposed above the TFT and the reflective structure, and located in the reflective region.    
   
   
       2 . The pixel structure according to  claim 1 , wherein the TFT comprises: 
 a gate electrode,    a gate insulating layer, disposed over the transparent substrate and covering the gate electrode;    a semiconductor layer, disposed on the gate insulating layer and above the gate electrode; and    a source/drain electrode, disposed on the semiconductor layer.    
   
   
       3 . The pixel structure according to  claim 2 , wherein the reflective structure comprises a first metallic layer.  
   
   
       4 . The pixel structure according to  claim 3 , wherein the gate insulating layer extends outside the TFT and covers the first metallic layer.  
   
   
       5 . The pixel structure according to  claim 4 , wherein the first metallic layer is received in a depression of the substrate surface.  
   
   
       6 . The pixel structure according to  claim 3 , wherein the gate insulating layer extends outside the TFT and is disposed between the first metallic layer and the transparent substrate.  
   
   
       7 . The pixel structure according to  claim 6 , wherein the first metallic layer is received in a depression of the gate insulating layer surface.  
   
   
       8 . The pixel structure according to  claim 3 , wherein the reflective structure further comprises a second metallic layer, disposed on the first metallic layer.  
   
   
       9 . The pixel structure according to  claim 8 , wherein the gate insulating layer extends outside the TFT, and is disposed between the first metallic layer and the second metallic layer.  
   
   
       10 . The pixel structure according to  claim 1 , wherein the reflective structure is sawtooth-shaped or block-shaped.  
   
   
       11 . The pixel structure according to  claim 1 , further comprising a flatting layer, disposed between the pixel electrode and the transparent substrate, and covering the TFT and the reflective structure.  
   
   
       12 . A fabricating method for fabricating a pixel structure for a transflective LCD panel, comprising: 
 providing a transparent substrate;    forming a TFT and configuring a reflective structure on the transparent substrate, wherein the reflective structure is located at one side of the TFT;    forming a passivation layer over the transparent substrate, wherein the passivation layer covers the TFT and the reflective structure;    forming a pixel electrode above the TFT and the reflective structure, wherein the pixel electrode and the TFT are electrically connected to each other; and    forming a reflective layer above the TFT and the reflective structure.    
   
   
       13 . The fabricating method for fabricating a pixel structure according to  claim 12 , wherein the step of forming the TFT comprises: 
 forming a gate electrode;    forming a gate insulating layer, covering the gate electrode;    forming a semiconductor layer on the gate insulating layer above the gate electrode; and    forming a source/drain electrode on the semiconductor layer, and coupling the semiconductor layer to the pixel electrode.    
   
   
       14 . The fabricating method for fabricating a pixel structure according to  claim 12 , wherein the step of forming a reflective structure comprises forming a first metallic layer on the transparent substrate.  
   
   
       15 . The fabricating method for fabricating a pixel structure according to  claim 14 , wherein the first metallic layer is formed simultaneously with the gate electrode.  
   
   
       16 . The fabricating method for fabricating a pixel structure according to  claim 15 , wherein before the first metallic is formed, a first depression is formed for receiving the first metallic layer.  
   
   
       17 . The fabricating method for fabricating a pixel structure according to  claim 14 , wherein the first metallic layer is formed simultaneously with the source/drain electrode.  
   
   
       18 . The fabricating method for fabricating a pixel structure according to  claim 17 , wherein after the gate insulating layer is formed and before the first metallic layer is formed, a second depression is formed on the gate insulating layer for receiving the first metallic layer.  
   
   
       19 . The fabricating method for fabricating a pixel structure according to  claim 14 , wherein the method for forming the reflective structure further comprises forming a second metallic layer on the first metallic layer.  
   
   
       20 . The fabricating method for fabricating a pixel structure according to  claim 19 , wherein the first metallic layer and the gate electrode are simultaneously formed, and the second metallic layer and the source/drain electrode are simultaneously formed.  
   
   
       21 . The fabricating method for fabricating a pixel structure according to  claim 20 , wherein before forming the first metallic layer, a first depression is formed for receiving the first metallic layer therein.  
   
   
       22 . The fabricating method for fabricating a pixel structure according to  claim 20 , wherein after the gate insulating layer is formed and before the second metallic layer is formed at the gate insulating layer, a second depression is formed for receiving the second metallic layer therein.  
   
   
       23 . The fabricating method for fabricating a pixel structure according to  claim 18 , wherein after the passivation layer formed and before the pixel electrode is formed, a flatting layer is formed over the transparent substrate, covering the TFT and the reflective structure.