Apparatus and method for electrically contacting wafer in electronic chemical plating cell

Abstract

An apparatus and method for electrically contacting a wafer in an electronic chemical plating cell includes a plating bath containing an electrolytic solution therein, an anode member arranged at a lower portion in the plating bath, a support member for arranging a wafer at an upper portion in the plating bath to face the anode member, a first cathode contact member electrically contacting an edge of the wafer, a second cathode contact member electrically contacting the center of the wafer, and a power supply electrically connected among the anode member, the first cathode contact member and the second cathode contact member to supply the power. Since resistance of a seed layer is reduced, it is possible to improve uniformity of the plating layer.

1 . An apparatus for electrically contacting a wafer in an electronic chemical plating cell comprising: 
 a plating bath having an electrolytic solution therein;    an anode member arranged in a lower portion of the plating bath;    a support member for arranging a wafer in an upper portion of the plating bath to face the anode member;    a first cathode contact member electrically contacting an edge of the wafer;    a second cathode contact member electrically contacting the center of the wafer; and    a power supply electrically connected to the anode member, the first cathode contact member and the second cathode contact member.    
   
   
       2 . The apparatus of  claim 1 , wherein the first cathode contact member is provided with a plurality of contact pins contacting the edge of the wafer along the corner of the wafer.  
   
   
       3 . The apparatus of  claim 2 , wherein the contact pins are formed at constant intervals.  
   
   
       4 . A method for electrically contacting a wafer in an electronic chemical plating cell comprising: 
 preparing a plating bath containing an electrolytic solution;    arranging an anode member in a lower portion of the plating bath;    arranging a wafer in an upper portion of the plating bath to face the anode member;    arranging a first cathode contact member to electrically contact an edge of the wafer;    arranging a second cathode contact member to electrically contact the center of the wafer; and    supplying electrical power from a power source connected to the anode member, the first cathode contact member and the second cathode contact member.    
   
   
       5 . The method of  claim 4 , wherein arranging the first cathode contact member comprises arranging the first cathode contact member in contact with the edge of the wafer at a plurality of points along the corner of the wafer.  
   
   
       6 . The method of  claim 4 , wherein arranging the second cathode contact member comprises arranging the second cathode contact member to contact the center of the wafer at a plurality of points.  
   
   
       7 . The method as claimed in  claim 4 , wherein the wafer has a thickness of 300 mn or greater.