Method of forming polysilicon film using a laser annealing apparatus

Abstract

An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

1 . A method of forming polysilicon film, comprising the steps of: 
 providing a substrate;    forming an amorphous silicon film on the substrate;    aiming a beam of laser on a location of the amorphous silicon film and targeting the laser-irradiated location with a gas comprising at least a doping element at the same time, so that the amorphous silicon film is recrystallized into a polysilicon film doped with the doping element.    
     
     
         2 . The method of  claim 1 , wherein the gas further comprises nitrogen.  
     
     
         3 . The method of  claim 1 , wherein the gas further comprises an inert gas.  
     
     
         4 . The method of  claim 1 , wherein the doping element comprises phosphine.  
     
     
         5 . A method of forming polysilicon film, comprising the steps of: 
 providing a laser annealing apparatus comprising a chamber, a movable device positioned inside the chamber, a gas diversion nozzle positioned inside the chamber close to the movable device, a laser source for emitting a beam of laser which passing through the gas diversion nozzle to target at a location on the movable device, and a gas supply device connected with the gas diversion nozzle for delivering a jet of gas comprising at least a doping element to the laser-irradiated location on the movable device;    forming an amorphous layer on a substrate;    placing the substrate having the amorphous layer thereon on the movable device inside the chamber; and    aiming the beam of laser emitted from the laser source on a location of the amorphous silicon film and targeting the laser-irradiated location with the gas diversion nozzle for delivering the jet of gas comprising the doping element at the same time, so that the amorphous silicon film is re-crystallized into a polysilicon film doped with the doping element.    
     
     
         6 . The method of  claim 5 , wherein the gas further comprises nitrogen.  
     
     
         7 . The method of  claim 5 , wherein the gas further comprises an inert gas.  
     
     
         8 . The method of  claim 5 , wherein the doping element comprises phosphine.