Phase change film for semiconductor nonvolatile memory and sputtering target for forming phase change film

Abstract

A phase change film for a semiconductor nonvolatile memory and a sputtering target for forming the phase change film. The phase change film for a semiconductor nonvolatile memory and the sputtering target for forming the phase change film have a composition containing 10 to 25 atomic % of Ge, 10 to 25 atomic % of Sb, 1 to 10 atomic % of Ga, and 10 atomic % or less of B, Al, C, Si and lanthanoid elements, with the balance being Te and inevitable impurities.

1 . A phase change film for a semiconductor nonvolatile memory having a composition comprising: 
 10 to 25 atomic % of Ge;    10 to 25 atomic % of Sb;    1 to 10 atomic % of Ga; and    a balance of Te and impurities.    
   
   
       2 . A phase change film for a semiconductor nonvolatile memory comprising: 
 10 to 25 atomic % of Ge;    10 to 25 atomic % of Sb;    1 to 10 atomic % of Ga;    a total of 10 atomic % or less of at least one or more elements selected from a group consisting of B, Al, C, Si and lanthanoid elements; and    a balance of Te and impurities.    
   
   
       3 . The phase change film for a semiconductor nonvolatile memory according to  claim 2 , wherein the lanthanoid elements are at least one or more elements selected from a group consisting of Dy, Tb, Nd, Sm, and Gd.  
   
   
       4 . The phase change film for a semiconductor nonvolatile memory according to  claim 1 , 
 wherein the electric resistivity of the film measured by a four-point probe method after crystallization is 5×10 −3  to 5×10 Ω·cm, and the melting point of the film is 600° C. or less.    
   
   
       5 . A sputtering target for forming a phase change film for a semiconductor nonvolatile memory having a composition according to  claim 1 .  
   
   
       6 . A sputtering target for forming a phase change film for a semiconductor nonvolatile memory having a composition according to  claim 2 .  
   
   
       7 . The sputtering target for forming a phase change film for a semiconductor nonvolatile memory according to  claim 6 , wherein the lanthanoid elements are at least one or more elements selected from a group consisting of Dy, Tb, Nd, Sm, and Gd.  
   
   
       8 . The phase change film for a semiconductor nonvolatile memory according to  claim 2   wherein the electric resistivity of the film measured by a four-point probe method after crystallization is 5×10 −3  to 5×10 Ω·cm, and the melting point of the film is 600° C. or less.