US2007052942A1PendingUtilityA1

Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method

Assignee: NIKON CORPPriority: Oct 8, 2003Filed: Nov 3, 2006Published: Mar 8, 2007
Est. expiryOct 8, 2023(expired)· nominal 20-yr term from priority
H10P 72/7602H10P 72/0414G03F 7/70925G03F 7/70341G03F 7/7075G03F 7/2041
50
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Claims

Abstract

A substrate transport apparatus, which transports a substrate that has been exposed with an image of a pattern through a projection optical system and a liquid, comprises a substrate support member that supports the substrate, and a liquid removal mechanism that removes the liquid that has adhered to at least one of the substrate support member and at least a portion of the area of the rear surface of the substrate.

Claims

exact text as granted — not AI-modified
1 . An apparatus for removing an immersion lithography liquid, comprising: 
 a housing device configured to prevent contamination of an exposure device or chamber with a scattered liquid;    a rotatable stage inside the housing device, configured to support a substrate; and    a motor configured to rotate the substrate and/or stage.    
   
   
       2 . The apparatus of  claim 1 , further comprising a power-transmission device configured to transmit rotary power from the motor to the stage.  
   
   
       3 . The apparatus of  claim 1 , further comprising: 
 at least one gas inlet on or near a top of the housing device, configured to introduce an inert gas into the housing device; and    at least one outlet on or near a bottom of the housing device, configured to discharge the inert gas and any contaminant from the housing device.    
   
   
       4 . An immersion lithography apparatus, comprising the liquid-removing apparatus of  claim 1 , in the exposure device or chamber.  
   
   
       5 . The apparatus of  claim 1 , wherein the stage further includes a chuck configured to fix or hold the substrate.  
   
   
       6 . The apparatus of  claim 1 , further comprising at least one gas-spraying device above the stage in the housing device, configured to spray the substrate with an inert gas.  
   
   
       7 . An apparatus for removing an immersion lithography liquid, comprising: 
 a housing device configured to prevent contamination of an exposure device or chamber with a scattered liquid;    a stage inside the housing device, configured to support a substrate; and    at least one gas-spraying device above the stage in the housing device, configured to spray the substrate with an inert gas.    
   
   
       8 . The apparatus of  claim 7 , further comprising: 
 at least one gas inlet on or near a top of the housing device, configured to introduce the inert gas into the housing device; and    at least one outlet on or near a bottom of the housing device, configured to discharge the inert gas and any contaminant from the housing device.    
   
   
       9 . An immersion lithography apparatus, comprising the liquid-removing apparatus of  claim 7 , in the exposure device or chamber.  
   
   
       10 . The apparatus of  claim 7 , wherein the stage further includes a chuck configured to fix or hold the substrate.  
   
   
       11 . A method of immersion lithography comprising: 
 coating a photoresist on a substrate;    immersing the substrate in a liquid;    exposing the substrate;    removing the liquid from the substrate by rotating the stage and/or substrate at high speed; and    developing the photoresist.    
   
   
       12 . The method of  claim 11 , wherein the substrate is rotated at 3000 rpm or more.  
   
   
       13 . The method of  claim 11 , further comprising spraying the substrate with an inert gas when removing the liquid from the substrate.  
   
   
       14 . The method of  claim 11 , wherein the step of removing the liquid from the substrate is performed in an exposure device or chamber.  
   
   
       15 . The method of  claim 11 , wherein the step of removing the liquid from the substrate is performed in a development device or chamber.  
   
   
       16 . A method of immersion lithography comprising: 
 coating a photoresist on a substrate;    immersing the substrate in a liquid;    exposing the substrate;    removing the liquid from the substrate by spraying the substrate with an inert gas; and    developing the photoresist.    
   
   
       17 . The method of  claim 16 , wherein the inert gas comprises nitrogen (N 2 ).  
   
   
       18 . The method of  claim 17 , wherein the inert gas consists essentially of nitrogen (N 2 ).  
   
   
       19 . The method of  claim 16 , wherein the step of removing the liquid from the substrate is performed in an exposure device or chamber.  
   
   
       20 . The method of  claim 16 , wherein the step of removing the liquid from the substrate is performed in a development device or chamber.

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