US2007052942A1PendingUtilityA1
Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
Est. expiryOct 8, 2023(expired)· nominal 20-yr term from priority
H10P 72/7602H10P 72/0414G03F 7/70925G03F 7/70341G03F 7/7075G03F 7/2041
50
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Claims
Abstract
A substrate transport apparatus, which transports a substrate that has been exposed with an image of a pattern through a projection optical system and a liquid, comprises a substrate support member that supports the substrate, and a liquid removal mechanism that removes the liquid that has adhered to at least one of the substrate support member and at least a portion of the area of the rear surface of the substrate.
Claims
exact text as granted — not AI-modified1 . An apparatus for removing an immersion lithography liquid, comprising:
a housing device configured to prevent contamination of an exposure device or chamber with a scattered liquid; a rotatable stage inside the housing device, configured to support a substrate; and a motor configured to rotate the substrate and/or stage.
2 . The apparatus of claim 1 , further comprising a power-transmission device configured to transmit rotary power from the motor to the stage.
3 . The apparatus of claim 1 , further comprising:
at least one gas inlet on or near a top of the housing device, configured to introduce an inert gas into the housing device; and at least one outlet on or near a bottom of the housing device, configured to discharge the inert gas and any contaminant from the housing device.
4 . An immersion lithography apparatus, comprising the liquid-removing apparatus of claim 1 , in the exposure device or chamber.
5 . The apparatus of claim 1 , wherein the stage further includes a chuck configured to fix or hold the substrate.
6 . The apparatus of claim 1 , further comprising at least one gas-spraying device above the stage in the housing device, configured to spray the substrate with an inert gas.
7 . An apparatus for removing an immersion lithography liquid, comprising:
a housing device configured to prevent contamination of an exposure device or chamber with a scattered liquid; a stage inside the housing device, configured to support a substrate; and at least one gas-spraying device above the stage in the housing device, configured to spray the substrate with an inert gas.
8 . The apparatus of claim 7 , further comprising:
at least one gas inlet on or near a top of the housing device, configured to introduce the inert gas into the housing device; and at least one outlet on or near a bottom of the housing device, configured to discharge the inert gas and any contaminant from the housing device.
9 . An immersion lithography apparatus, comprising the liquid-removing apparatus of claim 7 , in the exposure device or chamber.
10 . The apparatus of claim 7 , wherein the stage further includes a chuck configured to fix or hold the substrate.
11 . A method of immersion lithography comprising:
coating a photoresist on a substrate; immersing the substrate in a liquid; exposing the substrate; removing the liquid from the substrate by rotating the stage and/or substrate at high speed; and developing the photoresist.
12 . The method of claim 11 , wherein the substrate is rotated at 3000 rpm or more.
13 . The method of claim 11 , further comprising spraying the substrate with an inert gas when removing the liquid from the substrate.
14 . The method of claim 11 , wherein the step of removing the liquid from the substrate is performed in an exposure device or chamber.
15 . The method of claim 11 , wherein the step of removing the liquid from the substrate is performed in a development device or chamber.
16 . A method of immersion lithography comprising:
coating a photoresist on a substrate; immersing the substrate in a liquid; exposing the substrate; removing the liquid from the substrate by spraying the substrate with an inert gas; and developing the photoresist.
17 . The method of claim 16 , wherein the inert gas comprises nitrogen (N 2 ).
18 . The method of claim 17 , wherein the inert gas consists essentially of nitrogen (N 2 ).
19 . The method of claim 16 , wherein the step of removing the liquid from the substrate is performed in an exposure device or chamber.
20 . The method of claim 16 , wherein the step of removing the liquid from the substrate is performed in a development device or chamber.Join the waitlist — get patent alerts
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