Polishing liquid composition

Abstract

A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.

1 . A polishing liquid composition for polishing a surface to be polished comprising an insulating layer and a metal layer, the polishing liquid composition comprising a compound having six or more carbon atoms and a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water, wherein the compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule is represented by the formula (I):  
       R 1 —X—(CH 2 ) q —[CH(OH)] n —CH 2 OH   (I)  
     wherein 
 R 1  is a hydrocarbon group having 1 to 12 carbon atoms;  
 X is a group represented by 
 (CH 2 ) m , wherein m is 1,  
 oxygen atom,  
 sulfur atom,  
 COO group,  
 OCO group,  
 a group represented by NR 2  or  
 O(R 2 O)P(O)O, wherein R 2  is hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms;  
 
 q is 0 or 1; and  
 n is an integer of 1 to 4.  
 
   
   
       2 . The polishing liquid composition according to  claim 1 , further comprising an organic acid.  
   
   
       3 . The polishing liquid composition according to  claim 2 , wherein the organic acid is an etching agent.  
   
   
       4 . The polishing liquid composition according to  claim 1 , further comprising an etching agent comprising an inorganic acid.  
   
   
       5 - 6 . (canceled)  
   
   
       7 . The polishing liquid composition according to  claim 1 , further comprising an oxidizing agent, an abrasive or a mixture thereof.  
   
   
       8 - 10 . (canceled)  
   
   
       11 . A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 1 .  
   
   
       12 . The polishing liquid composition according to  claim 2 , further comprising an oxidizing agent, an abrasive or a mixture thereof.  
   
   
       13 . A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 2 .  
   
   
       14 . A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 7 .  
   
   
       15 . A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 12 .  
   
   
       16 . A method of making a polishing liquid composition, the method comprising 
 mixing water and a compound having a molecular structure in which each of two or more adjacent carbon atoms has a hydroxyl group; and    producing the polishing liquid composition of  claim 1 .    
   
   
       17 . The polishing compound according to  claim 1 , wherein the compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule is selected from the group consisting of 1,2-heptanediol, 1,2-hexanediol, 1,2-octanediol, 1,2,3-hexanetriol, 1,2,6-hexanetriol, 1,2,3-heptanetriol, glyceryl ethers, monoglycerides, partially esterified products prepared by carrying out an esterification reaction of gluconic acid with an alcohol, compounds prepared by reacting glycidol with a monoalkylamine or a dialkylamine, diesters of tartaric acid, and 1,2-cyclohexanediol.