Method and apparatus for removing encapsulating material from a packaged microelectronic device

Abstract

A method and apparatus for encapsulating microelectronic devices. In one embodiment, the method includes removing a portion of encapsulating material that at least partially surrounds a microelectronic substrate by directing a source of laser radiation toward the encapsulating material. The method can further include exposing a surface of the microelectronic substrate, for example, to enhance a rate at which heat is transferred away from the microelectronic substrate. Alternatively, the encapsulating material can be removed to form heat transfer structures, such as pins or ribs, also to enhance a rate at which heat is transferred away from the microelectronic substrate. In still another embodiment, a portion of the encapsulating material or a support member to which the substrate is attached can be removed to define interlocking features that allow one microelectronic substrate package to be stacked on another and to resist relative movement between the two packages.

1 - 16 . (canceled)  
     
     
         17 . A method for packaging a microelectronic substrate, comprising: 
 positioning at least one of an encapsulating material and a support member adjacent to the microelectronic substrate; and    processing the support member to have an interlocking feature by manipulating a portion of the support member, the interlocking feature being configured to engage with a corresponding interlocking feature of another microelectronic substrate package.    
     
     
         18 . The method of  claim 17  wherein manipulating a portion of the support member includes directing laser radiation toward the support member to ablate the portion of the support member.  
     
     
         19 . (canceled)  
     
     
         20 . The method of  claim 17  wherein processing the support member includes forming a recess in the support member.  
     
     
         21 . (canceled)  
     
     
         22 . The method of  claim 17  wherein the microelectronic substrate is electrically coupled to the support member and the interconnecting feature is a first feature formed in the support member, and wherein the method further comprises processing the encapsulating material to form a second interconnecting feature configured to engage the first interconnecting feature of another microelectronic substrate.  
     
     
         23 - 25 . (canceled)  
     
     
         26 . A method for packaging a microelectronic substrate, comprising: 
 electrically coupling the microelectronic substrate to a support member having a first surface and a second surface facing opposite the first surface, the first surface having a conductive bond pad;    positioning the support member and the microelectronic substrate between two portions of a mold with the first surface and the bond pad of the support member facing a first cavity in the first portion of the mold and the microelectronic substrate facing a second cavity in the second portion of the mold;    disposing an encapsulating material in the first and second cavities of the mold to engage the microelectronic substrate and the bond pad; and    removing a portion of the encapsulating material covering the bond pad to expose the bond pad while the microelectronic substrate remains in an operable condition.    
     
     
         27 . The method of  claim 26 , further comprising: 
 aligning a first edge of the first cavity with a second edge of the second cavity; and    rigidly supporting the support member in the mold by clamping the support member between the first and second edges.    
     
     
         28 . The method of  claim 26  wherein removing the portion of the encapsulating material includes directing laser radiation toward the encapsulating material and ablating the portion of the encapsulating material.  
     
     
         29 . The method of  claim 26  wherein removing the portion of the encapsulating material includes directing a laser beam having a power of from about 4 watts to about 25 watts toward the encapsulating material.  
     
     
         30 . The method of  claim 26  wherein removing the portion of the encapsulating material includes sequentially removing layers of the portion of the encapsulating material by sequentially exposing the encapsulating material to laser radiation.  
     
     
         31 . The method of  claim 26 , further comprising attaching a solder ball to the bond pad.  
     
     
         32 - 63 . (canceled)