Semiconductor device manufacturing method and semiconductor device

Abstract

A manufacturing method of a semiconductor device having a highly reliable capacitor, and the semiconductor device are provided. The semiconductor device manufacturing method according to the present invention includes: a first step of forming a first electrode of a capacitor on a semiconductor substrate; a second step of forming a capacitor insulating film on the whole surface including a side surface and an upper surface of the first electrode; a third step of forming a protection insulating film made of a material different from that of the capacitor insulating film, on the capacitor insulating film; a fourth step of removing the protection insulating film and the capacitor insulating film from the upper surface of the first electrode, by anisotropically etching the protection insulating film and the capacitor insulating film; a fifth step of removing the protection insulating film that remains on the side surface of the first electrode; and a sixth step of forming a second electrode of the capacitor on the capacitor insulating film, after removing the protection insulating film.

1 . A semiconductor device manufacturing method, comprising: 
 a first step of forming a first electrode of a capacitor on a semiconductor substrate;    a second step of forming a capacitor insulating film on the whole surface including a side surface and an upper surface of the first electrode;    a third step of forming a protection insulating film made of a material different from that of the capacitor insulating film, on the capacitor insulating film;    a fourth step of removing the protection insulating film and the capacitor insulating film from the upper surface of the first electrode, by anisotropically etching the protection insulating film and the capacitor insulating film;    a fifth step of removing the protection insulating film that remains on the side surface of the first electrode; and    a sixth step of forming a second electrode of the capacitor on the capacitor insulating film, after removing the protection insulating film.    
   
   
       2 . The semiconductor device manufacturing method as claimed in  claim 1 , wherein 
 at the first step, a cap insulating film of the same pattern as that of the first electrode is formed on the first electrode, and    at the end of the anisotropic etching at the fourth step, the anisotropic etching is controlled so that the capacitor insulating film covers at least a part of the side surface of the cap insulating film.    
   
   
       3 . The semiconductor device manufacturing method as claimed in  claim 1 , wherein 
 the first electrode is a plate electrode, and the second electrode is a storage electrode.    
   
   
       4 . The semiconductor device manufacturing method as claimed in  claim 2 , wherein 
 the first electrode is a plate electrode, and the second electrode is a storage electrode.    
   
   
       5 . The semiconductor device manufacturing method as claimed in  claim 3 , wherein 
 the first step comprises:    a first sub step of forming a first electrode material on the semiconductor substrate; and    a second sub step of forming the plate electrode by patterning the first electrode material.    
   
   
       6 . The semiconductor device manufacturing method as claimed in  claim 4 , wherein 
 the first step comprises:    a first sub step of forming a first electrode material on the semiconductor substrate; and    a second sub step of forming the plate electrode by patterning the first electrode material.    
   
   
       7 . The semiconductor device manufacturing method as claimed in  claim 5 , wherein 
 by the patterning at the second sub step, through-holes are formed in the plate electrode,    at the fourth step, the laminated film of the capacitor insulating film and the protection insulating film is left on the inner side surface of the through-holes, and bottom portions of the through-holes are exposed, and    at the sixth step, a second electrode material is filled in the through-holes to form the storage electrode.    
   
   
       8 . The semiconductor device manufacturing method as claimed in  claim 6 , wherein 
 by the patterning at the second sub step, through-holes are formed in the plate electrode,    at the fourth step, the laminated film of the capacitor insulating film and the protection insulating film is left on the inner side surface of the through-holes, and bottom portions of the through-holes are exposed, and    at the sixth step, a second electrode material is filled in the through-holes to form the storage electrode.    
   
   
       9 . The semiconductor device manufacturing method as claimed in  claim 1 , wherein 
 the capacitor includes a plurality of laminated capacitor layers, each of the laminated capacitor layers has the first electrode, the capacitor insulating film and the second electrode, and the first electrode and the second electrode of each of the laminated capacitor layers are electrically connected to each other, respectively.    
   
   
       10 . The semiconductor device manufacturing method as claimed in  claim 3 , wherein 
 the capacitor includes a plurality of laminated capacitor layers, each of the laminated capacitor layers has the first electrode, the capacitor insulating film and the second electrode, and the first electrode and the second electrode of each of the laminated capacitor layers are electrically connected to each other, respectively.    
   
   
       11 . The semiconductor device manufacturing method as claimed in  claim 4 , wherein the capacitor includes a plurality of laminated capacitor layers, each of the laminated capacitor layers has the first electrode, the capacitor insulating film and the second electrode, and the first electrode and the second electrode of each of the laminated capacitor layers are electrically connected to each other, respectively.  
   
   
       12 . The semiconductor device manufacturing method as claimed in  claim 1 , wherein 
 the capacitor insulating film is any one of a tantalum oxide film, an aluminum oxide film, an hafnium oxide film, and a laminated film of an aluminum oxide film and an hafnium oxide film.    
   
   
       13 . The semiconductor device manufacturing method as claimed in  claim 1 , wherein 
 the protection insulating film is a silicon oxide film.    
   
   
       14 . The semiconductor device manufacturing method as claimed in  claim 10 , wherein 
 the protection insulating film is a silicon oxide film.    
   
   
       15 . A semiconductor device including a capacitor comprising: 
 a first electrode provided on a semiconductor substrate;    a capacitor insulating film provided on a side surface of the first electrode; and    a second electrode provided on a surface of the capacitor insulating film facing the first electrode, wherein    the capacitor insulating film has a first part along the side surface of the first electrode, and a second part extending substantially in parallel with the semiconductor substrate from a lower end of the first part in a direction of the second electrode.    
   
   
       16 . The semiconductor device as claimed in  claim 15 , wherein 
 the first electrode is a plate electrode, and the second electrode is a storage electrode.    
   
   
       17 . The semiconductor device as claimed in  claim 16 , wherein 
 the capacitor includes a plurality of laminated capacitor layers, each of the laminated capacitor layers has the first electrode, the capacitor insulating film and the second electrode, and the first electrode and the second electrode of each of the laminated capacitor layers are electrically connected to each other, respectively.    
   
   
       18 . The semiconductor device as claimed in  claim 15 , wherein 
 a cap insulating film is provided on the first electrode, and an upper end of the capacitor insulating film covers at least a part of the side surface of the cap insulating film.    
   
   
       19 . The semiconductor device as claimed in  claim 16 , wherein 
 a cap insulating film is provided on the first electrode, and an upper end of the capacitor insulating film covers at least a part of the side surface of the cap insulating film.    
   
   
       20 . The semiconductor device as claimed in  claim 17 , wherein 
 a cap insulating film is provided on the first electrode, and an upper end of the capacitor insulating film covers at least a part of the side surface of the cap insulating film.