Electronic component for amplifying high frequency and radio communication system

Abstract

A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.

1 - 17 . (canceled)  
   
   
       18 . A High frequency power module, comprising: 
 a first amplification means for amplifying a first modulated signal to be transmit;    a second amplification means for amplifying a second modulated signal to be transmit which is different from the first modulated signal;    a power detection means for generating a voltage related to an output power of the first amplification means or an output power the second amplification means; and    a bias means for supplying bias signals in accordance with the voltage and an output power instruction signal;    wherein the power detection means including a first detector which generates a first signal in connection with the passing current of the first amplification means, a second detector which generates a second signal in connection with the passing current of the second amplification means and a sense resistor which receives the first signal and the second signal and generates the voltage,    wherein the first detector includes a first detection transistor and a first current mirror circuit which couples the first detection transistor and supplies the first signal to the sense resistor; and    wherein the second detector includes a second detection transistor and a second current mirror circuit which couples the second detection transistor and supplies the second signal to the sense resistor.    
   
   
       19 . A High frequency power module according to  claim 18 , 
 wherein when an output level of the first modulation signal and that of the second modulation signal are different from each other, a ratio between current in a transfer source of the first current mirror circuit and the second current mirror circuit and current on the transfer side of the first current mirror circuit and the second current mirror circuit is set so that magnitudes of currents flowing in the sense resistor become almost equal to each other in the case where either the first amplification means or the second amplification means operates at a maximum output level.    
   
   
       20 . A High frequency power module according to  claim 18 , 
 wherein the bias means comprising a comparing circuit for comparing the voltage with the output power instruction signal.    
   
   
       21 . A High frequency power module according to  claim 19 , 
 wherein the first amplification means comprising a plurality of amplifying stages which is connected in series and each of the plurality of amplifying stages has an amplification transistor and a bias transistor which forms a current mirror circuit,    wherein the second amplification means comprising a plurality of amplifying stages which is connected in series and each of the plurality of amplifying stages has an amplification transistor and a bias transistor which forms a current mirror circuit,    wherein the bias signals are supplied to each of the plurality of amplifying stages of the first amplification means and the second amplification means by passing a predetermined control current from the bias means to the bias transistors.    
   
   
       22 . A High frequency power module according to  claim 21 , 
 wherein the first detection transistor receives an signal to be input to the final stage of the first amplification means,    wherein the second detection transistor receives an signal to be input to the final stage of the second amplification means.    
   
   
       23 . A High frequency power module according to  claim 22 , 
 wherein the first modulated signal is a GSM transmission signal and the second modulated signal is a DCS transmission signal.    
   
   
       24 . A High frequency power module according to  claim 23 , further comprising a switch means for switching the first amplification means and the second amplification means, 
 wherein the switch means is turned on when the first amplification means is operated and is turned off when the second amplification means is operated.    
   
   
       25 . A High frequency power module according to  claim 24 , 
 wherein the switch means includes a MOSFET having high breakdown voltage.