Exposure apparatus and method for producing device

Abstract

An exposure apparatus, wherein exposure is carried out while filling a space between a projection optical system and a substrate with a liquid, enables to suppress deterioration of a pattern image caused by any bubble in the liquid. The exposure apparatus includes a liquid supply unit 1 which fills at least a part of the space between the projection optical system and the substrate with a liquid 50 , and exposes the substrate by projecting an image of a pattern onto the substrate via the projection optical system. The liquid supply unit 1 includes a degassing unit 21 which suppresses the generation of the bubble in the liquid 50.

1 . A pattern formation method comprising the steps of: 
 forming a resist film on a substrate;    performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;    developing said resist film after the pattern exposure; and    recycling said liquid used in the step of performing pattern exposure.    
   
   
       2 . The pattern formation method of  claim 1 , wherein said liquid provided on said resist film comprises at least one of a fresh liquid, or said recycled liquid.  
   
   
       3 . The pattern formation method of  claim 1 , wherein said liquid is recycled during the next pattern exposure.  
   
   
       4 . The pattern formation method of  claim 1 , wherein the recycling step has a sub-step of removing an impurity from the liquid.  
   
   
       5 . The pattern formation method of  claim 4 , wherein said liquid passes through a filter in the sub-step of removing an impurity.  
   
   
       6 . (canceled)  
   
   
       7 . The pattern formation method of  claim 3 , further comprising a step of removing an impurity mixed in said liquid having been recovered after the pattern exposure.  
   
   
       8 . The pattern formation method of  claim 7 , wherein said liquid passes through a filter in the step of removing an impurity.  
   
   
       9 . (canceled)  
   
   
       10 . The pattern formation method of  claim 1 , further comprising, before or after the step of performing pattern exposure, a step of removing an impurity mixed in said liquid.  
   
   
       11 . The pattern, formation method of  claim 10 , wherein said liquid passes through a filter in the step of removing an impurity.  
   
   
       12 . (canceled)  
   
   
       13 . The pattern formation method of  claim 1 , further comprising, after the step of performing pattern exposure, a degassing step of removing a gas included in said liquid.  
   
   
       14 . The pattern formation method of  claim 1 , wherein said liquid is water or perfluoropolyether.  
   
   
       15 . The pattern formation method of  claim 1 , wherein said exposing light is KrF excimer laser, ArF excimer laser or F 2  laser.  
   
   
       16 . A semiconductor fabrication apparatus comprising: 
 a unit for providing a liquid between a resist film formed on a substrate and an exposure lens;    a liquid supply section coupled to said unit to provide said liquid to said unit; and    a recycling unit coupled to said unit for receiving said liquid from said unit and for purifying said liquid,    wherein said recycling unit is coupled to said liquid supply section to transfer said purified liquid to said liquid supply section.    
   
   
       17 .- 20 . (canceled)  
   
   
       21 . The semiconductor fabrication apparatus of  claim 16 , further comprising a degassing section provided between said liquid supply section and said unit, for removing a gas included in said liquid to be supplied to said unit.  
   
   
       22 . The semiconductor fabrication apparatus of  claim 16 , wherein said recycling unit has a filter for removing said impurity included in said liquid.  
   
   
       23 . The semiconductor fabrication apparatus of  claim 16 , wherein said impurity is particles.  
   
   
       24 .- 26 . (canceled)  
   
   
       27 . The semiconductor fabrication apparatus of  claim 16 , wherein said liquid is water or perfluoropolyether.  
   
   
       28 . The semiconductor fabrication apparatus of  claim 16 , wherein said exposure section uses, as exposing light, KrF excimer laser, ArF excimer laser or F 2  laser.  
   
   
       29 . The semiconductor fabrication apparatus of  claim 16 , said unit is placed in a pattern exposure section.  
   
   
       30 . A semiconductor fabrication apparatus comprising: 
 a unit to provide a liquid between a resist film formed on a substrate and an exposure lens;    a liquid supply section that is connected to said unit to provide said liquid for said unit;    a degas section provided between said liquid supply section and said unit to remove a gas included in a liquid provided from said liquid supply section,    an impurity removal unit that is connected to said unit to remove an impurity included in said liquid flowed from said unit,    wherein said impurity removal unit is connected to said liquid supply section to transfer a liquid from which said impurity has been removed, for said liquid supply section.    
   
   
       31 .- 32 . (canceled)  
   
   
       33 . The semiconductor fabrication apparatus of  claim 30 , wherein said impurity removal unit has a filter for removing said impurity included in said liquid.  
   
   
       34 .- 35 . (canceled)  
   
   
       36 . The pattern formation method of  claim 1 , wherein the substrate and the resist formed thereon are fully submerged in the liquid during the pattern exposure.  
   
   
       37 . The semiconductor fabrication apparatus of  claim 16 , wherein the substrate and the resist formed thereon are fully submerged in the liquid in an exposure section having the exposure lens.  
   
   
       38 . The semiconductor fabrication apparatus of  claim 30 , wherein the substrate and the resist formed thereon are fully submerged in the liquid in an exposure section having the exposure lens.  
   
   
       39 . The pattern formation method of  claim 1 , wherein the liquid is only deposited on a surface of the resist during the pattern exposure.  
   
   
       40 . The semiconductor fabrication apparatus of  claim 16 , wherein the liquid is only deposited on a surface of the resist at an exposure section having the exposure lens.  
   
   
       41 . The semiconductor fabrication apparatus of  claim 30 , wherein the liquid is only deposited on a surface of the resist at an exposure section having the exposure lens.  
   
   
       42 . A semiconductor manufacturing apparatus comprising: 
 a stage having a substrate on which a resist film is formed;    a liquid supplying section for providing a liquid onto said stage;    an exposing section which irradiates said resist film with exposing light through a mask with said liquid provided on said resist film; and    a removing unit which removes a gas included in said liquid.    
   
   
       43 . The semiconductor manufacturing apparatus of  claim 42 , wherein said removing unit degases said liquid supplied onto said resist film and is disposed between said liquid supplying section and said exposing section or within said liquid supplying section.  
   
   
       44 . (canceled)  
   
   
       45 . A semiconductor manufacturing apparatus comprising: 
 a stage having a substrate on which a resist film is formed;    a liquid supplying section for providing a liquid onto said stage;    an exposing section which irradiates said resist film with exposing light through a mask with said liquid provided on said resist film; and    a degassing section which removes a gas included in said liquid,     wherein said degassing section includes:    a removing part which removes a gas from said liquid having been provided from said liquid supplying section;    a first supplying path which provides, onto said resist film, said liquid from which said gas has been removed; and    a second supplying path which provides, to said removing part, said liquid having been provided onto said resist film.    
   
   
       46 . A semiconductor manufacturing apparatus comprising: 
 an exposing section which irradiates, with exposing light through a mask, a resist film formed on a substrate, with a liquid provided on said resist film;    a supplying section which provides said liquid between said resist film and said exposing section;    a collecting section which collects said liquid having been supplied onto said resist film; and    a controlling section which controls a liquid supplying operation of said supplying section, a liquid collecting operation of said collecting section and an operation of a stage having said substrate.    
   
   
       47 . The semiconductor manufacturing apparatus of  claim 46 , wherein said controlling section controls the liquid supplying operation and the liquid collecting operation and adjusts the operation of said stage in such a manner that a flow rate and a flowing direction of said liquid caused on said resist film by the liquid supplying operation and the liquid collecting operation substantially accord with a movement rate and a moving direction of said stage.  
   
   
       48 . The semiconductor manufacturing apparatus of  claim 45 , wherein said liquid collected through said second supplying path to said removing part is degassed in said removing part and provided onto said resist film through said first supplying path.  
   
   
       49 . The semiconductor manufacturing apparatus of  claim 46 , wherein said collecting section and said supplying section are mutually connected, and said liquid having been collected by said collecting section flows into said supplying section.  
   
   
       50 . The semiconductor manufacturing apparatus of  claim 45 , wherein said liquid is composed of water or perfluoropolyether.  
   
   
       51 . The semiconductor manufacturing apparatus of  claim 45 , wherein said exposing light is KrF excimer laser, ArF excimer laser or F 2  laser.  
   
   
       52 .- 56 . (canceled)  
   
   
       57 . A pattern formation method comprising the steps of: 
 forming a resist film on a substrate;    irradiating selectively said resist film with exposing light with a liquid provided on said resist film; and    forming a resist pattern by developing said resist film after the pattern exposure,    wherein the step of performing pattern exposure includes a sub-step of removing a gas included in said liquid provided on said resist film.    
   
   
       58 . The pattern formation method of  claim 57 , wherein said liquid is composed of water or perfluoropolyether.  
   
   
       59 . (canceled)  
   
   
       60 . The pattern formation method of  claim 57 , wherein said exposing light is KrF excimer laser, ArF excimer laser or F 2  laser.  
   
   
       61 . A pattern formation method comprising the steps of: 
 forming a resist film on a substrate;    irradiating selectively said resist film with exposing light with a liquid provided on said resist film; and    forming a resist pattern by developing said resist film after the pattern exposure,    wherein the step of performing pattern exposure includes a sub-step of supplying said liquid onto said resist film and collecting said liquid from on said resist film in such a manner that a flow rate and a flowing direction of said liquid caused on said resist film substantially accord with a movement rate and a moving direction of said stage.    
   
   
       62 . The pattern formation method of  claim 61 , further comprising a step of removing a gas from said liquid having been collected from on said resist film and providing, onto said resist film, said liquid from which said gas has been removed.  
   
   
       63 . The pattern formation method of  claim 61 , wherein said exposing light is KrF excimer laser, ArF excimer laser or F 2  laser.  
   
   
       64 .- 67 . (canceled)