Semiconductor device

Abstract

A semiconductor device includes a first level layer, a transmitting antenna provided on the first level layer and extending in a first direction, a receiving antenna provided on the first level layer and extending in the first direction, and a plurality of first wiring portions provided on the first level layer and extending in a second direction that makes an angle of 45 to 90 degrees with respect to the first direction.

1 . A semiconductor device comprising: 
 a first level layer;    a transmitting antenna provided on the first level layer and extending in a first direction;    a receiving antenna provided on the first level layer and extending in the first direction; and    a plurality of first wiring portions provided on the first level layer and extending in a second direction that makes an angle of 45 to 90 degrees with respect to the first direction.    
   
   
       2 . The semiconductor device according to  claim 1 , further comprising: 
 a plurality of second wiring portions provided on the first level layer and extending in the first direction; and    a first shield layer provided between a group of the transmitting antenna and the receiving antenna, and the plurality of the second wiring portions.    
   
   
       3 . The semiconductor device according to  claim 2 , wherein the first shield layer surrounds the transmitting antenna, the receiving antenna and the plurality of the first wiring portions.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein the angle is 90 degrees.  
   
   
       5 . The semiconductor device according to  claim 2 , wherein the first shield layer is connected to a fixed potential.  
   
   
       6 . The semiconductor device according to  claim 2 , further comprising: 
 a second level layer provided above the first level layer;    a plurality of second wiring portions provided on the second level layer and extending in the first direction; and    a second shield layer provided between the first level layer and the second level layer.    
   
   
       7 . The semiconductor device according to  claim 6 , wherein the second shield layer is made of a plate.  
   
   
       8 . The semiconductor device according to  claim 6 , wherein the second shield layer contains a plurality of wiring portions and is of a lattice-like shape.  
   
   
       9 . The semiconductor device according to  claim 6 , wherein the second shield layer contains a plurality of wirings portions and the plurality of wiring portions are arranged to be in parallel with each other with intervals therebetween.  
   
   
       10 . The semiconductor device according to  claim 1 , wherein the transmitting antenna and the receiving antenna face each other.  
   
   
       11 . A semiconductor device comprising: 
 a transmitting loop antenna;    a receiving loop antenna; and    a plurality of first wiring portions each extending in a linear manner.    
   
   
       12 . The semiconductor device according to  claim 11 , further comprising: 
 a plurality of second wiring portions each containing two wiring segments each arranged to be substantially in parallel with a tangent line of the transmitting loop antenna and the receiving loop antenna, and connected to each other; and    a shield layer provided between a group of the transmitting loop antenna and the receiving loop antenna, and the plurality of second wiring portions.    
   
   
       13 . The semiconductor device according to  claim 12 , further comprising: 
 a first level layer in which the transmitting loop antenna is provided;    a second level layer provided above the first level layer, the second level layer in which the receiving loop antenna is provided;    wherein    the plurality of first wiring portions are provided in the first level layer and the second level layer; and    the plurality of second wiring portions are provided in the first level layer and the second level layer.    
   
   
       14 . The semiconductor device according to  claim 12 , further comprising: 
 a first level layer in which the transmitting loop antenna, the receiving loop antenna, the plurality of first wiring portions and the plurality of second wiring portions are provided.    
   
   
       15 . The semiconductor device according to  claim 12 , wherein the first shield layer surrounds the transmitting loop antenna and the receiving loop antenna.  
   
   
       16 . The semiconductor device according to  claim 15 , wherein the shield layer includes 6 plates and is a rectangular parallelepiped.  
   
   
       17 . The semiconductor device according to  claim 12 , wherein the shield layer is connected to a fixed potential.  
   
   
       18 . A semiconductor device comprising: 
 a first level layer;    a transmitting antenna provided on the first level layer and extending in a first direction;    a receiving antenna provided on the first level layer, extending in the first direction and arranged to be away from the transmitting antenna by a first distance; and    a plurality of first wiring portions provided on the first level layer, extending in the first direction and arranged to be away from the transmitting antenna and the receiving antenna by a second distance which is larger than the first distance.    
   
   
       19 . The semiconductor device according to  claim 18 , further comprising: 
 a second level layer provided above the first level layer; and    a plurality of second wiring portions provided on the second level layer, extending in the first direction and arranged to be away from the transmitting antenna and the receiving antenna by the second distance.    
   
   
       20 . The semiconductor device according to  claim 18 , wherein the second distance is two times or more than the first distance.