Semiconductor device and method of manufacturing the same

Abstract

Provided is a semiconductor device having a semiconductor chip mounted over a substrate, in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, wherein an adhesive layer formed integral as a film is adhered to each block made of substrates corresponding to a plurality of semiconductor devices and contact bonding under heat is conducted. The adhesive layer corresponding to the plurality of semiconductor devices is thus formed continuously and with this adhesive layer, the interconnect formation surface at the end portion of the substrate is covered. Moreover, with a thermosetting resin used as the adhesive layer, the semiconductor chip and substrate are adhered by contact bonding under heat while placing the substrate on a rigid heat insulating plate. According to the present invention, heat diffusion and deformation of the substrate upon contact bonding under heat can be prevented by the rigid heat insulating plate. Upon dicing, the peeling of the interconnect from the substrate can be prevented by holding the interconnect with the adhesive layer at the end portion of the substrate.

1 - 15 . (canceled)  
     
     
         16 . A manufacturing method of a semiconductor device comprising a step of mounting a semiconductor chip over a substrate in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, further comprising a step of: 
 using a thermosetting resin as the adhesive layer and adhering the semiconductor chip and the substrate by contact bonding under heat while having the substrate placed over a rigid heat insulating plate.    
     
     
         17 . A manufacturing method of a semiconductor device according to  claim 16 , wherein the rigid heat insulating plate is glass or ceramic.  
     
     
         18 . A manufacturing method of a semiconductor device comprising a step of mounting a semiconductor chip over a substrate in which an interconnect is formed, by using an adhesive layer to connect a stud bump of the semiconductor chip to one end of the interconnect and an external terminal of the semiconductor device to the other end of the interconnect, further comprising a step of: 
 forming a common interconnect along the outer periphery of the substrate by electroless plating so that the number of the stud bump connected to the common interconnect is greater than that of the external terminal connected to the common interconnect.    
     
     
         19 . A manufacturing method of a semiconductor device comprising a step of mounting a semiconductor chip over a substrate in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, further comprising a step of: 
 adhering an adhesive layer, which is integrated as a film, to each block formed of a plurality of the substrates corresponding to a plurality of the semiconductor devices.    
     
     
         20 . A manufacturing method of a semiconductor device comprising a step of mounting a semiconductor chip over a substrate in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, further comprising the steps of: 
 adhering an adhesive layer, which is integrated as a film, to each block formed of a plurality of the substrates corresponding to a plurality of the semiconductor devices; and    conducting contact bonding under heat for each block to continuously form an adhesive layer corresponding to the plurality of the semiconductor devices.    
     
     
         21 . A manufacturing method of a semiconductor device comprising a step of mounting a semiconductor chip over a substrate in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, further comprising the steps of: 
 adhering an adhesive layer, which is integrated as a film, to each block formed of a plurality of the substrates corresponding to a plurality of the semiconductor devices;    conducting contact bonding under heat for each block to continuously form an adhesive layer corresponding to the plurality of the semiconductor devices; and    cutting the plurality of the substrates by dicing into each one without separating the substrate from the adhesive layer.