Solid-state image sensing device producing method and solid-state image sensing device

Abstract

A method of producing a solid-state image sensing device comprising a photoelectric conversion layer, the method comprising: laminating a first epitaxial layer on a semiconductor substrate; forming a part of the photoelectric conversion layer in the first epitaxial layer; forming a second epitaxial layer by epitaxial growth on the first epitaxial layer; and forming the remaining part of the photoelectric conversion layer in the second epitaxial layer to connect the remaining part of the photoelectric conversion layer to the part of the photoelectric conversion layer in the first epitaxial layer.

1 . A method of producing a solid-state image sensing device comprising a photoelectric conversion layer, the method comprising: 
 laminating a first epitaxial layer on a semiconductor substrate;    forming a part of the photoelectric conversion layer in the first epitaxial layer;    forming a second epitaxial layer by epitaxial growth on the first epitaxial layer; and    forming the remaining part of the photoelectric conversion layer in the second epitaxial layer to connect the remaining part of the photoelectric conversion layer to the part of the photoelectric conversion layer in the first epitaxial layer.    
     
     
         2 . A method of producing a solid-state image sensing device comprising a photoelectric conversion layer, the method comprising: 
 laminating a plurality of epitaxial layers on a semiconductor substrate; and    forming the photoelectric conversion layer in the plurality of epitaxial layers so as to be continuous in a direction of lamination of the plurality of epitaxial layers.    
     
     
         3 . A solid-state image sensing device comprising: 
 a semiconductor substrate;    a photoelectric conversion layer;    a first epitaxial layer laminated on the semiconductor substrate; and    a second epitaxial layer formed by epitaxial growth on the first epitaxial layer,    wherein at least a part of the photoelectric conversion layer is formed in the first epitaxial layer; and    the remaining part of the photoelectric conversion layer is formed in the second epitaxial layer so as to be connected to the part of the photoelectric conversion layer.    
     
     
         4 . A solid-state image sensing device comprising: 
 a semiconductor substrate;    a plurality of epitaxial layers laminated by epitaxial growth on the semiconductor substrate; and    a photoelectric conversion layer formed so as to be continuous in a direction of lamination of the plurality of epitaxial layers.