Highly integrated and reliable DRAM and its manufacture

Abstract

A semiconductor device and its manufacture method wherein the semiconductor substrate has first and second insulating films, the first insulating film being an insulating film other than a silicon nitride film formed at least on a side wall of a conductive pattern including at least one layer of metal or metal silicide, and the second insulating film being a silicon nitride film formed to cover the first insulating film and the upper surface and side wall of the conductive pattern. The first insulating film may be formed to cover the upper surface and side wall of the conductive pattern. A semiconductor device and its manufacture method are provided which can realize high integrated DRAMs of 256 M or larger without degrading reliability and stability.

1 . A semiconductor device comprising: 
 a semiconductor substrate having a surface;    a plurality of first conductive layers formed on the surface of said semiconductor substrate generally parallel;    a first insulating film formed to cover said first conductive layers;    a second insulating film embedded adjacent to one of said conductive layers, said second insulating film having a surface coincident with the upper surface of said first insulating film and parallel to the surface of said semiconductor substrate; and    a contact area formed in said second insulating film, part of said contact area exposing one of said first insulating film.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein said first conductive layers form DRAM bit lines.