Semiconductor light-emitting device

Abstract

A first cladding layer of a first conductivity type formed above a crystal substrate, an active layer formed above the first cladding layer, a diffusion prevention layer formed on the active layer and preventing an impurity from diffusing into the active layer, an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the diffusion prevention layer and prevents an overflow of carriers implanted into the active layer, and a second cladding layer of the second conductivity type formed above the overflow prevention layer are provided.

1 . A semiconductor light-emitting device comprising: 
 a first cladding layer of a first conductivity type;    an active layer formed above the first cladding layer;    a layer formed on the active layer;    an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the layer, the overflow prevention layer having greater stoichiometric ratio of Al than the layer; and    a second cladding layer of the second conductivity type formed above the overflow prevention layer.    
   
   
       2 . A semiconductor light-emitting device of  claim 1 , wherein the active layer has a barrier layer provided being in adjacent to the layer.  
   
   
       3 . A semiconductor light-emitting device of  claim 1 , wherein a thickness of the layer is 0.02 μm or more and 0.15 μm or less.  
   
   
       4 . A semiconductor light-emitting device of  claim 1 , wherein an impurity concentration of the overflow prevention layer is 5×10 18 /cm −3  or more, and the layer is a non-doped layer.  
   
   
       5 . A semiconductor light-emitting device according to  claim 1 , wherein the overflow prevention layer is formed of Al t Ga 1-t N (t>0.16).  
   
   
       6 . A semiconductor light-emitting device of  claim 2 , wherein an impurity concentration of the overflow prevention layer is 5×10 18 /cm −3  or more, and the layer is a non-doped layer.  
   
   
       7 . A semiconductor light-emitting device comprising: 
 a first cladding layer of a first conductivity type;    an active layer formed above the first cladding layer, the active layer having a multiple quantum well structure formed of In x Ga 1-x N/In y Ga 1-y N (0.05≦x≦1.0, 0≦y≦1.0, x>y);    a layer formed on the active layer;    an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the layer, the overflow prevention layer having greater stoichiometric ratio of Al than the layer; and    a second cladding layer of the second conductivity type formed above the overflow prevention layer.    
   
   
       9 . A semiconductor light-emitting device of  claim 7 , wherein the active layer has a barrier layer provided being in adjacent to the layer.  
   
   
       10 . A semiconductor light-emitting device of  claim 9 , wherein an impurity concentration of the overflow prevention layer is 5×10 18 /cm −3  or more, and the layer is a non-doped layer.  
   
   
       11 . A semiconductor light-emitting device comprising: 
 a first cladding layer of a first conductivity type;    an active layer formed above the first cladding layer;    a GaN layer formed on the active layer;    an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the diffusion prevention layer; and    a second cladding layer of the second conductivity type formed above the overflow prevention layer.    
   
   
       12 . A semiconductor light-emitting device of  claim 11 , wherein the GaN layer is non-doped GaN.  
   
   
       13 . A semiconductor light-emitting device of  claim 11 , wherein the active layer has a barrier layer provided being in adjacent to the layer.  
   
   
       14 . A semiconductor light-emitting device of  claim 11 , wherein a thickness of the layer is 0.02 μm or more and 0.15 μm or less.  
   
   
       15 . A semiconductor light-emitting device of  claim 11 , wherein an impurity concentration of the overflow prevention layer is 5×10 18 /cm −3  or more, and the layer is a non-doped layer.  
   
   
       16 . A semiconductor light-emitting device of  claim 11 , wherein the active layer has a multiple quantum well structure formed of In x Ga 1-x N/In y Ga 1-y N (0.05≦x≦1.0, 0≦y≦1.0, x>y).  
   
   
       17 . A semiconductor light-emitting device of  claim 12 , wherein the active layer has a barrier layer provided being in adjacent to the layer.  
   
   
       18 . A semiconductor light-emitting device of  claim 17 , wherein an impurity concentration of the overflow prevention layer is 5×10 18 /cm −3  or more, and the layer is a non-doped layer.  
   
   
       19 . A semiconductor light-emitting device of  claim 12 , wherein the active layer has a multiple quantum well structure formed of In x Ga 1-x N/In y Ga 1-y N (0.05≦x≦1.0, 0≦y≦1.0, x>y).  
   
   
       20 . A semiconductor light-emitting device of  claim 18 , wherein the active layer has a multiple quantum well structure formed of In x Ga 1-x -N/In y Ga 1-y N (0.05≦x≦1.0, 0≦y≦1.0, x>y).