Plasma processing apparatus including etching processing apparatus and ashing processing apparatus and plasma processing method using plasma processing apparatus

Abstract

A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

1 . A plasma processing apparatus, comprising: 
 an etching processing apparatus including a gas supply unit for supplying an etching gas to a processing chamber, an exhaust unit for lowering pressure in the processing chamber, a mounting stage for mounting and for holding in the processing chamber an objective item to be processed, a transport unit for mounting the objective item on the stage and for transporting from the stage the objective item for which processing is finished, and a plasma generating unit for generating plasma in the processing chamber; and    an ashing processing apparatus including a gas supply unit for supplying an ashing gas to a processing chamber, an exhaust unit for lowering pressure in the processing chamber, a mounting stage for mounting and for holding in the processing chamber an objective item to be processed, a transport unit for mounting the objective item on the stage and for transporting from the stage the objective item for which processing is finished, and a plasma generating unit for generating plasma in the processing chamber, wherein:    a diameter of a mounting unit of the stage of the ashing processing apparatus is less than a diameter of a mounting unit of the stage of the etching processing apparatus; and    the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of the objective item.    
   
   
       2 . A plasma processing apparatus according to  claim 1 , wherein when the diameter of the mounting unit in the stage of the etching processing apparatus is a, a maximum deviation of a mounting position is α when the objective item is mounted on the stage of the etching processing apparatus by the transport unit, the diameter of the mounting unit of the stage of the ashing processing apparatus is b, and a maximum deviation of a mounting position is β when the objective item is mounted on the stage of the ashing processing apparatus by the transport unit, the plasma processing apparatus holds b≦a−(α+β)×2.  
   
   
       3 . A plasma processing apparatus according to  claim 1 , wherein the ashing processing apparatus comprises: 
 a plurality of pusher pins for pushing up the objective item mounted on the stage associated therewith, the objective item being pushed over the stage; and    a guide for restricting a position of the objective item on the stage.    
   
   
       4 . A plasma processing apparatus according to  claim 1 , wherein the ashing processing apparatus comprises: 
 a plurality of pusher pins for pushing up the objective item mounted on the stage associated therewith, the objective item being pushed over the stage; and    a guide including an inclined surface, the inclined surface being inclined downward in a direction to a central position of the stage.    
   
   
       5 . A plasma processing apparatus according to  claim 1 , wherein the ashing processing apparatus comprises: 
 a plurality of pusher pins for pushing up the objective item mounted on the stage associated therewith, the objective item being pushed over the stage; and    a guide including an inclined surface inclined downward in a direction to a central position of the stage, the guide being rotatable along a circumference of the stage.    
   
   
       6 . A plasma processing apparatus, comprising: 
 an etching processing apparatus including a gas supply unit for supplying an etching gas to a processing chamber, an exhaust unit for lowering pressure in the processing chamber, an etching mounting stage for mounting and for holding in the processing chamber an objective item to be processed, and a plasma generating unit for generating plasma in the processing chamber;    an ashing processing apparatus including a gas supply unit for supplying an ashing gas to a processing chamber, an exhaust unit for lowering pressure in the processing chamber, an ashing mounting stage for mounting and for holding in the processing chamber an objective item to be processed, the ashing mounting stage having a diameter less than a diameter of the etching mounting stage; and a plasma generating unit for generating plasma in the processing chamber;    a transport unit for mounting the objective item on the etching mounting stage, transporting from the stage the objective item for which processing is finished, and mounting the objective item on the ashing mounting stage; and    a measuring unit for measuring a distribution of deposited substance fixed onto a periphery of a rear surface of the objective item transported from the etching processing apparatus, wherein    the transport unit aligns, when mounting the objective item on the ashing mounting stage, a central point of an area of the objective item on which the deposited substance is not fixed with a central point of the ashing mounting stage.    
   
   
       7 . A plasma processing apparatus according to  claim 1 , wherein deposited substance fixed onto a periphery of a rear surface of the objective item during etching processing by the etching processing apparatus is removed during resist ashing by the ashing processing apparatus.  
   
   
       8 . A plasma processing method for use with a plasma processing apparatus comprising an etching processing apparatus including an etching mounting stage for mounting and for holding in a vacuum processing chamber an objective item to be processed, the etching mounting stage having a diameter less than a diameter of the objective item, and a plasma generating unit for generating plasma in the vacuum processing chamber and an ashing processing apparatus including an ashing mounting stage for mounting and for holding the objective item in the vacuum processing chamber, the ashing mounting stage having a diameter less than that of the etching mounting stage and a plasma generating unit for generating plasma in the vacuum processing chamber, the method comprising the steps of: 
 mounting the objective item on the etching mounting stage and conducting etching processing for the objective item;    transporting from the etching stage the objective item for which the etching processing is finished and mounting the objective item on the ashing mounting stage; and    removing, during resist ashing processing by the ashing processing apparatus, deposited substance fixed onto a periphery of a rear surface of the objective item during the etching processing by the etching processing apparatus.