Method of making non-volatile field effect devices and arrays of same

Abstract

Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. An electromechanically-deflectable, nanotube switching element is formed over the field effect device. Terminals and corresponding interconnect are provided to correspond to each of the source, drain and gate such that the nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal, and such that the others of said source, drain and gate are directly connected to their corresponding terminals.

1 . A method of making a non-volatile field effect device, the method comprising: 
 forming a semiconductor field effect device comprising a gate, source, and drain;    forming a gate terminal, a source terminal, and a drain terminal;    forming a control terminal; and    forming a nanotube switching element between one of the gate, source, and drain and its corresponding terminal, the nanotube switching element being switchable, in response to electrical stimulus on the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and drain and a second non-volatile state that disables current flow between the source and drain.    
     
     
         2 . The method of  claim 1 , further comprising providing a direct electrical connection between the others of the gate, source and drain and their corresponding terminal,  
     
     
         3 . The method of  claim 1 , wherein forming the nanotube switching element comprises forming a non-woven fabric of nanotubes.  
     
     
         4 . The method of  claim 3 , wherein forming the nanotube switching element further comprises defining a pattern in the non-woven fabric of nanotubes and removing nanotubes in accordance with the defined pattern.  
     
     
         5 . The method of  claim 3 , further comprising forming a sacrificial layer, forming the non-woven fabric of nanotubes over the sacrificial layer, and then removing the sacrificial layer to suspend a portion of the non-woven fabric of nanotubes.  
     
     
         6 . The method of  claim 1 , comprising forming the nanotube switching element in direct electrical communication with the one of the gate, source, and drain.  
     
     
         7 . The method of  claim 6 , comprising forming the nanotube switching element over the one of the gate, source, and drain.  
     
     
         8 . The method of  claim 1 , comprising forming the nanotube switching element in direct electrical communication with the terminal corresponding to the one of the gate, source, and drain.  
     
     
         9 . The method of  claim 1 , comprising forming the nanotube switching element and control terminal in spaced relation to one another.  
     
     
         10 . The method of  claim 9 , further comprising depositing a dielectric material on a surface of the control terminal facing the nanotube switching element.  
     
     
         11 . The method of  claim 1 , comprising forming the nanotube switching element on a substantially horizontal surface.  
     
     
         12 . The method of  claim 1 , further comprising forming a field-modulatable channel adjacent the gate and between the source and drain, and capable of current flow in response to electrical stimulus at the gate.  
     
     
         13 . A method of making a non-volatile field effect device, the method comprising: 
 forming a gate, a source, and a drain, with a conductive channel between the source and the drain; and    forming a nanotube switch having a corresponding control terminal and being positioned to control electrical conduction through said conductive channel.    
     
     
         14 . The method of  claim 13 , wherein the nanotube switch is positioned to be switchable between a first nonvolatile logical state in which electrical conduction through said conductive channel is enabled, and a second nonvolatile logical state in which electrical conduction through said conductive channel is disabled.  
     
     
         15 . The method of  claim 14 , wherein the first nonvolatile logical state comprises the nanotube switch contacting one of the gate, the source, and the drain, and wherein the second nonvolatile logical state comprises the nanotube switch contacting the control terminal.  
     
     
         16 . The method of  claim 14 , wherein the first nonvolatile logical state comprises the nanotube switch contacting a terminal corresponding to one of the gate, the source, and the drain, and wherein the second nonvolatile logical state comprises the nanotube switch contacting the control terminal.  
     
     
         17 . The method of  claim 13 , wherein forming the nanotube switch comprises forming a non-woven fabric of nanotubes.  
     
     
         18 . The method of  claim 17 , wherein forming the nanotube switch further comprises defining a pattern in the non-woven fabric of nanotubes and removing nanotubes in accordance with the defined pattern.  
     
     
         19 . The method of  claim 13 , comprising forming the nanotube switch and control terminal in spaced relation to one another.