US2007020403A1PendingUtilityA1

Process for producing extremely flat microcrystalline diamond thin film by laser ablation method

Assignee: JAPAN SCIENCE & TECH AGENCYPriority: May 30, 2003Filed: Mar 22, 2004Published: Jan 25, 2007
Est. expiryMay 30, 2023(expired)· nominal 20-yr term from priority
C30B 23/02C30B 29/04C23C 14/28C23C 14/0611C01B 32/26C01B 32/25
32
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Diamond thin films deposited by known PLD processes are composed of diamond crystal grains with a size of about 1 μm and have an irregular surface. A process for producing an ultraflat nanocrystalline diamond thin film by laser ablation includes creating atomic hydrogen and a supersaturated state of carbon in a space between a target and a substrate in a hydrogen atmosphere inside a reaction chamber at a substrate temperature of 450° C. to 650° C., a laser energy of 100 mJ or more, and a target-substrate distance of 15 to 25 mm to enable the growth of an ultraflat, single-phase nanocrystalline diamond thin film containing substantially no non-diamond component. The hydrogen atmosphere has a sufficient pressure to selectively completely etch off sp2 bond fractions (graphite fractions) deposited on the substrate with sp3 bond fractions remaining.

Claims

exact text as granted — not AI-modified
1 . A process for producing an ultraflat nanocrystalline diamond thin film by laser ablation, comprising creating atomic hydrogen and a supersaturated state of carbon in a space between a target and a substrate in a hydrogen atmosphere inside a reaction chamber at a substrate temperature of 450° C. to 650° C., a laser energy of 100 mJ or more, and a target-substrate distance of 15 to 25 mm to enable the growth of an ultraflat, single-phase nanocrystalline diamond thin film containing substantially no non-diamond component, the hydrogen atmosphere having a sufficient pressure to selectively completely etch off sp2 bond fractions (graphite fractions) deposited on the substrate with sp3 bond fractions remaining.  
   
   
       2 . The process for producing an ultraflat nanocrystalline diamond thin film by laser ablation according to  claim 1 , wherein the hydrogen atmosphere has a pressure of 2 Torr or more.  
   
   
       3 . The process for producing an ultraflat nanocrystalline diamond thin film by laser ablation according to  claim 1  or  2 , wherein the growth rate of the diamond thin film is 4 μm/hour or more.

Join the waitlist — get patent alerts

Track US2007020403A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.