US2007020165A1PendingUtilityA1

Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires

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Individually held — no corporate assignee on recordPriority: Nov 26, 2002Filed: Jul 1, 2003Published: Jan 25, 2007
Est. expiryNov 26, 2022(expired)· nominal 20-yr term from priority
Inventors:Raymond J. SuplinskasJanet Suplinskas
C01B 35/04C04B 35/62897C04B 2235/422C04B 2235/5244C23C 16/38C04B 2235/3843C04B 2235/428C04B 2235/404C04B 2235/3813Y10T428/2991C04B 2235/48C04B 2235/3808C23C 16/28C23C 16/56C04B 2235/5248C04B 35/62873C04B 2235/94C04B 2235/80C04B 35/62857C04B 2235/5264C04B 35/62878C04B 2235/3826C04B 2235/3804C04B 2235/3206C04B 35/76C23C 10/08H10N 60/0856
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Claims

Abstract

A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Claims

exact text as granted — not AI-modified
1 . A method for producing doped boron comprising the steps of: 
 introducing a boron containing vapor into a reaction vessel;    introducing a dopant vapor into the vessel to provide a mixture of the dopant vapor and the boron containing vapor; and    heating the mixture to produce doped boron.    
   
   
       2 . The method of  claim 1  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       3 . The method of  claim 1  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       4 . The method of  claim 3  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       5 . The method of  claim 4  wherein the hydrogen and boron trichloride vapor mixture is a roughly stoichiometric mixture.  
   
   
       6 . A method of  claim 1  including the step of exposing the doped boron to magnesium vapor to convert the doped boron to doped magnesium diboride.  
   
   
       7 . The method of  claim 6  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       8 . The method of  claim 6  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       9 . The method of  claim 8  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       10 . The method of  claim 9  wherein hydrogen and boron trichloride vapor mixture is a roughly stoichiometric mixture.  
   
   
       11 . A method according to  claim 1  including the step of providing in the vessel a fiber substrate for receiving the doped boron as a coating.  
   
   
       12 . The method of  claim 11  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       13 . The method of  claim 11  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       14 . The method of  claim 13  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       15 . A superconductor comprising doped magnesium diboride formed by heating a mixture of a boron containing vapor and a dopant vapor to produce doped boron and exposing the doped boron to a magnesium vapor.  
   
   
       16 . A superconductor according to  claim 15  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       17 . A superconductor according to  claim 15  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       18 . A superconductor according to  claim 17  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       19 . A superconductor according to  claim 18  wherein the hydrogen and boron trichloride vapor mixture is a roughly stoichiometric mixture.  
   
   
       20 . A superconductor according to  claim 15  wherein the doped boron is a coating on a fiber substrate.  
   
   
       21 . A superconductor according to  claim 20  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       22 . A superconductor according to  claim 20  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       23 . A superconductor according to  claim 21  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       24 . A superconductor according to  claim 23  wherein the hydrogen and boron trichloride vapor mixture is a roughly stoichiometric mixture.  
   
   
       25 . A superconductor according to  claim 20  wherein the fiber substrate is a silicon carbide substrate.  
   
   
       26 . A superconductor according to  claim 25  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       27 . A superconductor according to  claim 25  wherein the dopant vapor is titanium tetrachloride vapor.  
   
   
       28 . A superconductor according to  claim 27  wherein the boron containing vapor is a hydrogen and boron trichloride vapor mixture.  
   
   
       29 . A superconductor according to  claim 28  wherein the hydrogen and boron trichloride vapor mixture is a roughly stoichiometric mixture.  
   
   
       30 . A superconductor comprising a fiber substrate coated with magnesium diboride doped with a titanium compound.  
   
   
       31 . A superconductor according to  claim 30  wherein the fiber substrate is a silicon carbide substrate.

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