Semiconductor device and method for fabricating the same

Abstract

The semiconductor device includes an upper electrode line structure and a lower electrode line structure provided over a semiconductor substrate. The semiconductor device also includes a guard contact having a first portion and a second portion. The guard contact is disposed between the upper electrode line structure and the lower electrode line structure. The first and second portions of the guard contact have different line widths.

1 . A semiconductor device, comprising: 
 an upper electrode line structure and a lower electrode line structure provided over a semiconductor substrate; and    a guard contact having a first portion and a second portion that are disposed between the upper electrode line structure and the lower electrode line structure, the first and second portions of the guard contact having different line widths.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first portion and the second portion of the guard contact are disposed in a zigzag pattern.  
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first portion and the second portion of the guard contact are aligned to the middle of a longitudinal extension of the lower electrode line structure.  
     
     
         4 . The semiconductor device of  claim 1 , wherein the guard contact has a plurality of the first portions and a plurality of the second portions that are alternately disposed.  
     
     
         5 . The semiconductor device according to  claim 1 , wherein a width of the first portion is at least twice that of the second portion.  
     
     
         6 . A method for fabricating a semiconductor device comprising: 
 forming a lower electrode line structure over a semiconductor substrate having a lower structure;    forming a guard line having a first portion and a second portion over the lower electrode structure, wherein each line width of the first portion and the second portion is different from each other; and    forming an upper electrode line structure over the guard contact.    
     
     
         7 . The method according to  claim 6 , wherein the first portion and the second portion of the guard contact are alternately disposed in a zigzag pattern.  
     
     
         8 . The method according to  claim 7 , wherein a width of the first portion is at least twice that of the second portion.  
     
     
         9 . The method according to  claim 6 , wherein the first portion and the second portion of the guard contact are aligned to the middle of a longitudinal extension of the lower electrode line structure.  
     
     
         10 . The method according to  claim 9 , wherein a width of the first portion is greater than that of the second portion, the width being a direction corresponding to a longitudinal direction of the lower electrode line structure.