US2007018200A1PendingUtilityA1

Single frequency laser

37
Individually held — no corporate assignee on recordPriority: Oct 11, 2000Filed: Jan 20, 2006Published: Jan 25, 2007
Est. expiryOct 11, 2020(expired)· nominal 20-yr term from priority
Inventors:Brian Corbett
H01S 5/22H01S 5/10H01S 5/0202H01S 5/4031H01S 5/1064H01S 5/0654H01S 5/0203H01S 5/4087
37
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Claims

Abstract

This invention relates to generally to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers ( 1,2,3,4,5 ), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. The ridge ( 100;101 ) has at least one defect defining region ( 104 ), the at least one defect defining region of the ridge defining a defect in the ridge. The width of the ridge is greater in the at least one defect defining region of the ridge than in adjacent sections of the ridge.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device formed on a substrate having a plurality of layers, the device comprising at least one waveguide established by the selective removal of sections of at least one of the layers, the waveguide comprising at least one elongate section having at least one defect defining region, the at least one defect defining region of the waveguide defining an associated defect for the waveguide, wherein the width of the waveguide is greater in the at least one defect defining region of the waveguide than in at least one adjoining section of the waveguide.  
     
     
         2 . A semiconductor device according to  claim 1 , wherein the defect defining region comprises at least one side portion extending perpendicular to the longitudinal axis of the elongate body portion.  
     
     
         3 . A semiconductor device according to  claim 2 , wherein the defect defining region has two side portions extending in opposite directions from the elongate body portion of the waveguide.  
     
     
         4 . A semiconductor device according to  claim 1 , comprising at least one pair of opposing T-shaped waveguide sections disposed along the longitudinal axis of the device.  
     
     
         5 . A semiconductor device according to  claim 1 , wherein the associated defect comprises an aperture formed in the waveguide.  
     
     
         6 . A device according to  claim 5 , wherein the aperture extends transversely from one side of the waveguide to the opposing side of the waveguide.  
     
     
         7 . A device according to  claim 5 , wherein the aperture is substantially limited in width to the width of the elongate portion.  
     
     
         8 . A device according to  claim 5 , wherein the height of the waveguide is substantially the same as the depth of the aperture defined in the defect defining region.  
     
     
         9 . A device according to  claim 5 , the depth of the aperture defined in the defect defining region is substantially different to the height of the waveguide.  
     
     
         10 . A device according to  claim 9 , wherein the depth of the aperture is less than the height of the waveguide.  
     
     
         11 . A device according to  claim 1 , wherein the defect is formed by selective Ion Implantation in the region of the defect.  
     
     
         12 . A device according to  claim 1 , wherein the defect is formed using an Impurity Induced Layer Disorder (IILD) technique selectively in the defect region.  
     
     
         13 . A device according to  claim 1 , wherein a plurality of waveguides are formed on the same substrate.  
     
     
         14 . A device according to  claim 13 , wherein each of the plurality of waveguides is designed by careful selection of defect positioning and/or size, to provide different operating characteristics.  
     
     
         15 . An optical system, comprising the device of  claim 14 , wherein each waveguide is optically coupled to an associated light guide, further comprising an optical multiplexer coupled to the associated light guides and adapted to receive the light outputs from each of the waveguides and to combine the light outputs to provide a combined light output.  
     
     
         16 . A device according to  claim 1 , wherein the device is a laser.  
     
     
         17 . A device according to  claim 1 , wherein the waveguide is a ridge.  
     
     
         18 - 36 . (canceled)

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