Test probe and tester, method for manufacturing the test probe

Abstract

A test probe having a conductive part electrically connected to terminals of a test-object device, including: a silicon substrate; a protrusion made of resin provided on the silicon substrate; a first conductive part which is provided on the protrusion and comes in contact with the terminals; and a second conductive part which is provided in a region other than a region having the protrusion on the silicon substrate and is electrically connected to the first conductive part.

1 . A method for manufacturing a test probe, comprising: 
 having a conductive part electrically connected to terminals of a test-object device;    providing a protrusion made of resin on a silicon substrate;    providing a first conductive part that comes in contact with the terminals on the protrusion; and    providing a second conductive part that is electrically connected to the first conductive part in a region other than a region having the protrusion on the silicon substrate.    
   
   
       2 . The method according  claim 1 , further comprising: 
 forming the protrusion so as to extend in a first direction; and    providing a plurality of first wiring patterns in the first direction on the protrusion as the first conductive part.    
   
   
       3 . The method according  claim 2 , further comprising denting a region on the protrusion surface other than a region having the first wiring patterns by half-etching.  
   
   
       4 . The method according  claim 1 , further comprising forming the protrusion in a shape of an arch when seen cross-sectionally, the surface thereof bulging in a direction opposite from the silicon substrate.  
   
   
       5 . The method according  claim 1 , further comprising forming the protrusion by dispensing a function liquid containing the protrusion-forming resin from a liquid dispensing head onto the silicon substrate.  
   
   
       6 . The method according  claim 1 , further comprising forming a second insulating layer so as to cover the second conductive part.  
   
   
       7 . The method according  claim 1 , further comprising thinning the silicon substrate.  
   
   
       8 . The method according  claim 1 , further comprising providing a third insulating layer made of resin on a second surface of the silicon substrate opposite from a first surface having the protrusion and the conductive part.  
   
   
       9 . The method according  claim 8 , further comprising adhering a sheet form to the second surface of the silicon substrate as the third insulating layer.  
   
   
       10 . The method according  claim 8 , further comprising thinning the silicon substrate by treating the second surface before providing the third insulating layer.  
   
   
       11 . The method according  claim 1 , further comprising dicing the silicon substrate per every test probe after forming the plurality of test probes on the same silicon substrate almost simultaneously.  
   
   
       12 . The method according  claim 11 , further comprising: 
 adhering a sheet form to the second surface of the silicon substrate    opposite from the first surface having the protrusion and the conductive part; and    dicing the silicon substrate together with the sheet form.