Fin field effect transistors (FinFETs) and methods for making the same

Abstract

In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) forming a first side of a fin of a fin field effect transistor (FinFET); (2) processing the first side of the fin; and (3) forming a second side of the fin while supporting the first side of the fin. Numerous other aspects are provided.

1 . A method of semiconductor device manufacturing, comprising: 
 forming a first side of a fin of a fin field effect transistor (FinFET);    processing the first side of the fin; and    forming a second side of the fin while supporting the first side of the fin.    
   
   
       2 . The method of  claim 1  wherein forming the first side of the fin of the FinFET includes forming the first side of the fin of the FinFET while supporting an eventual second side of the fin.  
   
   
       3 . The method of  claim 1  wherein processing the first side of the fin includes forming a dielectric of a first material on the first side of the fin.  
   
   
       4 . The method of  claim 3  wherein processing the first side of the fin includes forming a gate conductor of a first material on the first side of the fin.  
   
   
       5 . The method of  claim 1  further comprising processing the second side of the fin.  
   
   
       6 . The method of  claim 5:   wherein processing the first side of the fin includes: 
 forming a dielectric of a first material on the first side of the fin; and  
 forming a gate conductor of a first material on the first side of the fin; and  
   wherein processing the second side of the fin includes forming a dielectric of a second material on the second side of the fin.    
   
   
       7 . The method of  claim 6  wherein processing the second side of the fin further includes forming a gate conductor of a second material on the second side of the fin.