Electron-beam treated CDO films

Abstract

A method of forming an integrated circuit including forming a dielectric film is described. The forming of the dielectric film includes: providing a substrate, providing a carbon doped oxide film on the substrate, and treating the carbon doped oxide film with an electron beam. The carbon doped oxide film can be provided by chemical vapor deposition.

1 . A method of forming an integrated circuit, including forming a dielectric film, the method comprising: 
 forming a carbon doped oxide (CDO) film on a substrate; and    treating the CDO film with an electron beam.    
   
   
       2 . The method of  claim 1 , wherein an energy of electrons in the electron beam is about 3 keV or greater.  
   
   
       3 . The method of  claim 1 , wherein an energy of electrons in the electron beam is about 8 keV or greater.  
   
   
       4 . The method of  claim 1 , wherein an energy of electrons in the electron beam is determined such that a predicted Kanaya-Okayama range of the electrons exceeds a thickness of the CDO film.  
   
   
       5 . The method of  claim 1 , further comprising: 
 preparing the CDO film on the substrate by using chemical vapor deposition.    
   
   
       6 . The method of  claim 1 , wherein the dielectric film is an interlevel dielectric film, and the method further comprises: 
 preparing a damascene structure in the CDO film.    
   
   
       7 . The method of  claim 6 , further comprising: 
 filling the damascene structure with a metal.    
   
   
       8 . The method  claim 7 , further comprising: 
 removing excess metal by using chemical mechanical polishing (CMP).    
   
   
       9 . The method of  claim 8 , wherein the metal comprises copper.  
   
   
       10 - 28 . (canceled)  
   
   
       29 . A method of forming a dielectric, comprising: 
 forming a carbon doped oxide (CDO) film on a substrate; and    treating the CDO film with an electron beam.    
   
   
       30 . The method of  claim 29 , wherein an energy of electrons in the electron beam is about 3 keV or greater.  
   
   
       31 . The method of  claim 29 , wherein an energy of electrons in the electron beam is about 8 keV or greater.  
   
   
       32 . The method of  claim 29 , wherein an energy of electrons in the electron beam is determined such that a predicted Kanaya-Okayama range of the electrons exceeds a thickness of the CDO film.  
   
   
       33 . The method of  claim 29 , further comprising: 
 preparing the CDO film on the substrate by using chemical vapor deposition.    
   
   
       34 . The method of  claim 29 , wherein the dielectric comprises an interlevel dielectric film, and the method further comprises: 
 preparing a damascene structure in the CDO film.    
   
   
       35 . The method of  claim 34 , further comprising: 
 filling the damascene structure with a metal.    
   
   
       36 . The method  claim 35 , further comprising: 
 removing excess metal by using chemical mechanical polishing (CMP).    
   
   
       37 . The method of  claim 36 , wherein the metal comprises copper.