Lead frame, resin-encapsulated semiconductor device, and method of producing the same

Abstract

A resin-encapsulated semiconductor device includes: a semiconductor chip on a surface of which a group of electrodes is disposed; a plurality of inner leads arranged along a periphery of the semiconductor chip; connecting members for connecting the electrodes of the semiconductor chip with the respective inner leads, an encapsulating resin for encapsulating surfaces of the semiconductor chip and the connecting members; and external electrodes exposed from the encapsulating resin. Each of the inner leads extends across the periphery of the semiconductor chip from an internal side to an external side of the periphery, and includes a protruded portion provided on a surface of the inner lead on an external side relative to the periphery of the semiconductor chip, the protruded portion being protruded in a thickness direction. Conductive bumps as the connecting members on the electrodes of the semiconductor chip are connected with internal portions of the respective inner leads, the internal portions being positioned inward relative to the protruded portions. The external electrodes are formed on surfaces of the protruded portions, and tip ends of the external electrodes are protruded relative to a back face of the semiconductor chip.

1 - 3 . (canceled)  
   
   
       4 . A resin-encapsulated semiconductor device comprising: 
 a semiconductor chip on a surface of which electrodes are provided;    a plurality of inner leads;    conductive bumps for flip-chip connecting the electrodes of the semiconductor chip with the respective inner leads; and    an encapsulating resin for encapsulating at least a surface of the semiconductor chip and the conductive bumps    wherein    each of the inner leads is provided with a protruded portion on a surface of the inner lead on an external side relative to the periphery of the semiconductor chip, the protruded portion being protruded in a thickness direction with a height not exceeding a position of a back face of the semiconductor chip, and    external electrodes are formed on surfaces of the protruded portions.    
   
   
       5 . The resin-encapsulated semiconductor device according to  claim 4 , wherein back faces of the inner leads are positioned substantially in the same plane as that of an external face of the encapsulating resin.  
   
   
       6 . The resin-encapsulated semiconductor device according to  claim 5 , wherein external end faces of the inner leads are positioned substantially in the same planes as that of external faces of the encapsulating resin.  
   
   
       7 . A resin-encapsulated semiconductor device comprising: 
 a plurality of inner leads;    a first semiconductor chip on a surface of which first electrodes and second electrodes are provided;    a second semiconductor chip being smaller in size than the first semiconductor chip and being disposed in a region surrounded by internal ends of the inner leads,    first conductive bumps for flip-chip connecting the first electrodes of the first semiconductor chip with the respective inner leads;    second conductive bumps for flip-chip connecting electrodes of the second semiconductor chip with the respective second electrodes of the first semiconductor chip; and    an encapsulating resin for encapsulating at least surfaces of the first and the second semiconductor chips and the first and the second conductive bumps;    wherein    each of the inner leads is provided with a protruded portion on a surface of the inner lead on an external side relative to thickness direction with a height not exceeding a position of a back face of the first semiconductor chip, and    external electrodes are formed on surfaces of the protruded portions.    
   
   
       8 . The resin-encapsulated semiconductor device according to  claim 7 , wherein an external face of the encapsulating resin, back faces of the inner leads, and a back face of the second semiconductor chip are positioned substantially in the same plane.  
   
   
       9 . The resin-encapsulated semiconductor device according to  claim 8 , wherein external end faces of the inner leads are positioned substantially in the same planes that contain external faces of the encapsulating resin.  
   
   
       10 . The resin-encapsulated semiconductor device according to  claim 4 , 
 wherein each of the internal portion of the inner leads is inclined from a back face of the inner lead to protruded side of the protruded portion toward an internal end of the internal portion.    
   
   
       11 - 13 . (canceled)  
   
   
       14 . The resin-encapsulated semiconductor device according to  claim 4  wherein a part of each of the external electrodes protrudes from the back face of the semiconductor chip.  
   
   
       15 . The resin-encapsulated semiconductor device according to  claim 4 , wherein a part of each of the external electrodes protrudes from the back face of the semiconductor chip.  
   
   
       16 . The resin-encapsulated semiconductor device according to  claim 7 , wherein a back face of the first semiconductor chip is exposed from the encapsulating resin.  
   
   
       17 . The resin-encapsulated semiconductor device according to  claim 7 , wherein a part of each of the external electrodes protrudes from the back face of the first semiconductor chip.