US2007007628A1PendingUtilityA1

Electron-beam treated CDO films

43
Assignee: INTEL CORPPriority: May 30, 2002Filed: Mar 16, 2004Published: Jan 11, 2007
Est. expiryMay 30, 2022(expired)· nominal 20-yr term from priority
Inventors:Lawrence Wong
H10P 14/6922H10P 14/6342H10P 14/6336H10P 14/665H10P 14/6539H10W 20/095H10P 14/6538Y10T428/24917
43
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Claims

Abstract

A method of forming an integrated circuit including forming a dielectric film is described. The forming of the dielectric film includes: providing a substrate, providing a carbon doped oxide film on the substrate, and treating the carbon doped oxide film with an electron beam. The carbon doped oxide film can be provided by chemical vapor deposition.

Claims

exact text as granted — not AI-modified
1 - 9 . (canceled)  
   
   
       10 . A dielectric comprising a carbon doped oxide (CDO) film having a modulus of about 20 GPa or greater.  
   
   
       11 . The dielectric of  claim 10 , wherein the CDO film has a dielectric constant of about 2 to about 4.  
   
   
       12 . The dielectric of  claim 10 , wherein the CDO film has a dielectric constant less than about 3.  
   
   
       13 . The dielectric of  claim 10 , wherein the CDO film has a density less than about 2 g/cm 3 .  
   
   
       14 . The dielectric of  claim 10 , wherein the CDO film has a density of about 1.3 g/cm 3  to about 1.4 g/cm 3 .  
   
   
       15 . The dielectric of  claim 11 , wherein the dielectric comprises an interlevel dielectric film.  
   
   
       16 . The dielectric of  claim 10 , wherein the CDO film has a modulus of about 20 GPa to about 25 GPa.  
   
   
       17 . The dielectric of  claim 16 , wherein the dielectric has a dielectric constant of about 2 to about 4.  
   
   
       18 . The dielectric of  claim 17 , wherein the dielectric comprises an interlevel dielectric film.  
   
   
       19 . A dielectric comprising a carbon doped oxide (CDO) film having a hardness of about 2.8 GPa to about 3.5 GPa.  
   
   
       20 . The dielectric of  claim 19 , wherein the CDO film has a dielectric constant of about 2 to about 4.  
   
   
       21 . The dielectric of  claim 20 , wherein the dielectric comprises an interlevel dielectric film.  
   
   
       22 . (canceled)  
   
   
       23 . The dielectric of  claim 19 , wherein the CDO film has a dielectric constant of about 2 to about 4.  
   
   
       24 . The dielectric of  claim 23 , wherein the dielectric comprises an interlevel dielectric film.  
   
   
       25 . A dielectric comprising a carbon doped oxide (CDO) film having a hardness of about 2.8 GPa or greater and a modulus of about 20 GPa or greater.  
   
   
       26 . The dielectric of  claim 25 , wherein the CDO film has a hardness of about 2.8 GPa to about 3.5 GPa and a modulus of about 20 GPa to about 25 GPa.  
   
   
       27 . The dielectric of  claim 26 , wherein the CDO film has a dielectric constant of about 2 to about 4.  
   
   
       28 . The dielectric of  claim 27 , wherein the dielectric comprises an interlevel dielectric film.

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