Magnetoresistive effect element and magnetic memory

Abstract

It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.

1 . A magnetoresistive effect element comprising: 
 a first magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned;    a magnetization free layer in which a magnetization direction is changeable;    a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer;    a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer;    a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and    a second magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned, the second magnetization pinned layer being provided so as to cover opposite surfaces respectively of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.    
     
     
         2 . The magnetoresistive effect element according to  claim 1 , wherein an interface between the dielectric layer and the second magnetization pinned layer and an interface between the non-magnetic metal layer and the second magnetization pinned layer are substantially coplanar.  
     
     
         3 . The magnetoresistive effect element according to  claim 1 , wherein an interface between the dielectric layer and the second magnetization pinned layer is located farther from an interface between the tunnel barrier layer and the magnetization free layer than an interface between the non-magnetic metal layer and the second magnetization pinned layer.  
     
     
         4 . The magnetoresistive effect element according to  claim 1 , wherein 
 the second magnetization pinned layer has a three-layer structure in which a first magnetic layer, a first non-magnetic layer, and a second magnetic layer are stacked in order from a side of the non-magnetic metal layer, or a five-layer structure in which a first magnetic layer, a first non-magnetic layer, a second magnetic layer, a second non-magnetic layer, and a third magnetic layer are stacked in order from the side of the non-magnetic metal layer, and    an interface between the dielectric layer and the second magnetization pinned layer exists in the first magnetic layer.    
     
     
         5 . The magnetoresistive effect element according to  claim 1 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially parallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Ru, Ir, Os or an alloy of them.    
     
     
         6 . The magnetoresistive effect element according to  claim 1 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially antiparallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Cu, Ag, Au, Rh, Ir, or an alloy of them.    
     
     
         7 . The magnetoresistive effect element according to  claim 1 , wherein the dielectric layer and the tunnel barrier layer comprises Al 2 O 3 , SiO 2 , MgO, AlN, SiON, or AlON.  
     
     
         8 . The magnetoresistive effect element according to  claim 1 , wherein at least one of the first and second magnetization pinned layers has a three-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer, or a five-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer/a non-magnetic layer/a magnetic layer.  
     
     
         9 . A magnetoresistive effect element comprising: 
 a first magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned;    a magnetization free layer in which a magnetization direction is changeable;    a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer;    a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer;    a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and    a second magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned, the second magnetization pinned layer being provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer.    
     
     
         10 . The magnetoresistive effect element according to  claim 9 , wherein an interface between the dielectric layer and the magnetization free layer and an interface between the non-magnetic metal layer and the magnetization free layer are substantially coplanar.  
     
     
         11 . The magnetoresistive effect element according to  claim 9 , wherein an interface between the dielectric layer and the magnetization free layer is located nearer an interface between the tunnel barrier layer and the magnetization free layer than an interface between the non-magnetic metal layer and the magnetization free layer.  
     
     
         12 . The magnetoresistive effect element according to  claim 9 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially parallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Ru, Ir, Os or an alloy of them.    
     
     
         13 . The magnetoresistive effect element according to  claim 9 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially antiparallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Cu, Ag, Au, Rh, Ir, or an alloy of them.    
     
     
         14 . The magnetoresistive effect element according to  claim 9 , wherein the dielectric layer and the tunnel barrier layer comprises Al 2 O 3 , SiO 2 , MgO, AlN, SiON, or AlON.  
     
     
         15 . The magnetoresistive effect element according to  claim 9 , wherein at least one of the first and second magnetization pinned layers has a three-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer, or a five-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer/a non-magnetic layer/a magnetic layer.  
     
     
         16 . A magnetoresistive effect element comprising: 
 a first magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned;    a magnetization free layer in which a magnetization direction is changeable;    a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer;    a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer;    a dielectric layer provided on a first region in an opposite surface of the non-magnetic metal layer from the magnetization free layer; and    a second magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned, the second magnetization pinned layer being provided so as to cover a second region other than the first region in the opposite surface of the non-magnetic metal layer from the magnetization free layer and an opposite surface of the dielectric layer from the non-magnetic metal layer.    
     
     
         17 . The magnetoresistive effect element according to  claim 16 , wherein an interface between the dielectric layer and the second magnetization pinned layer and an interface between the non-magnetic metal layer and the second magnetization pinned layer are substantially coplanar.  
     
     
         18 . The magnetoresistive effect element according to  claim 16 , wherein an interface between the dielectric layer and the second magnetization pinned layer is located farther from an interface between the tunnel barrier layer and the magnetization free layer than an interface between the non-magnetic metal layer and the second magnetization pinned layer.  
     
     
         19 . The magnetoresistive effect element according to  claim 16 , wherein 
 the second magnetization pinned layer has a three-layer structure in which a first magnetic layer, a first non-magnetic layer, and a second magnetic layer are stacked in order from a side of the non-magnetic metal layer, or a five-layer structure in which a first magnetic layer, a first non-magnetic layer, a second magnetic layer, a second non-magnetic layer, and a third magnetic layer are stacked in order from the side of the non-magnetic metal layer, and    an interface between the dielectric layer and the second magnetization pinned layer exists in the first magnetic layer.    
     
     
         20 . The magnetoresistive effect element according to  claim 16 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially parallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and the non-magnetic metal layer comprises Ru, Ir, Os or an alloy of them.    
     
     
         21 . The magnetoresistive effect element according to  claim 16 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially antiparallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Cu, Ag, Au, Rh, Ir, or an alloy of them.    
     
     
         22 . The magnetoresistive effect element according to  claim 16 , wherein the dielectric layer and the tunnel barrier layer comprises Al 2 O 3 , SiO 2 , MgO, AlN, SiON, or AlON.  
     
     
         23 . The magnetoresistive effect element according to  claim 16 , wherein at least one of the first and second magnetization pinned layers has a three-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer, or a five-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer/a non-magnetic layer/a magnetic layer.  
     
     
         24 . A magnetoresistive effect element comprising: 
 a first magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned;    a magnetization free layer in which a magnetization direction is changeable;    a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer;    a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer;    a dielectric layer provided on a first region in an opposite surface of the non-magnetic metal layer from the magnetization free layer; and    a second magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned, the second magnetization pinned layer being provided on a second region other than the first region in the opposite surface of the non-magnetic metal layer from the magnetization free layer.    
     
     
         25 . The magnetoresistive effect element according to  claim 24 , wherein an interface between the non-magnetic metal layer and the dielectric layer is located nearer an interface between the tunnel barrier layer and the magnetization free layer than an interface between the non-magnetic metal layer and the second magnetization pinned layer.  
     
     
         26 . The magnetoresistive effect element according to  claim 24 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially parallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Ru, Ir, Os or an alloy of them.    
     
     
         27 . The magnetoresistive effect element according to  claim 24 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially antiparallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Cu, Ag, Au, Rh, Ir, or an alloy of them.    
     
     
         28 . The magnetoresistive effect element according to  claim 24 , wherein the dielectric layer and the tunnel barrier layer comprises Al 2 O 3 , SiO 2 , MgO, AlN, SiON, or AlON.  
     
     
         29 . The magnetoresistive effect element according to  claim 24 , wherein at least one of the first and second magnetization pinned layers has a three-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer, or a five-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer/a non-magnetic layer/a magnetic layer.  
     
     
         30 . A magnetoresistive effect element comprising: 
 a first magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned;    a magnetization free layer in which a magnetization direction is changeable;    a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer;    a dielectric layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer;    a non-magnetic metal layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer so as to cover an opposite surface of the dielectric layer from the magnetization free layer; and    a second magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned, the second magnetization pinned layer being provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer.    
     
     
         31 . The magnetoresistive effect element according to  claim 30 , wherein an interface between the dielectric layer and the magnetization free layer and an interface between the non-magnetic metal layer and the magnetization free layer are substantially coplanar.  
     
     
         32 . The magnetoresistive effect element according to  claim 30 , wherein an interface between the dielectric layer and the magnetization free layer is located nearer an interface between the tunnel barrier layer and the magnetization free layer than an interface between the non-magnetic metal layer and the magnetization free layer.  
     
     
         33 . The magnetoresistive effect element according to  claim 30 , wherein an interface between the non-magnetic metal layer and the dielectric layer is located farther from an interface between the tunnel barrier layer and the magnetization free layer than an interface between the non-magnetic metal layer and the magnetization free layer.  
     
     
         34 . The magnetoresistive effect element according to  claim 30 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially parallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Ru, Ir, Os or an alloy of them.    
     
     
         35 . The magnetoresistive effect element according to  claim 30 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially antiparallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Cu, Ag, Au, Rh, Ir, or an alloy of them.    
     
     
         36 . The magnetoresistive effect element according to  claim 30 , wherein the dielectric layer and the tunnel barrier layer comprises Al 2 O 3 , SiO 2 , MgO, AlN, SiON, or AlON.  
     
     
         37 . The magnetoresistive effect element according to  claim 30 , wherein at least one of the first and second magnetization pinned layers has a three-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer, or a five-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer/a non-magnetic layer/a magnetic layer.  
     
     
         38 . A magnetoresistive effect element comprising: 
 a first magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned;    a magnetization free layer in which a magnetization direction is changeable;    a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer;    a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer;    a second magnetization pinned layer which comprises at least one magnetic layer and in which a magnetization direction is pinned, the second magnetization pinned layer being provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer; and    a dielectric layer which passes through the magnetization free layer and at least a part of the non-magnetic metal layer and which does not pass through the second magnetization pinned layer.    
     
     
         39 . The magnetoresistive effect element according to  claim 38 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially parallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Ru, Ir, Os or an alloy of them.    
     
     
         40 . The magnetoresistive effect element according to  claim 38 , wherein 
 a magnetization direction of a magnetic layer included in the first magnetization pinned layer and located nearest the magnetization free layer is substantially antiparallel to a magnetization direction of a magnetic layer included in the second magnetization pinned layer and located nearest the magnetization free layer, and    the non-magnetic metal layer comprises Cu, Ag, Au, Rh, Ir, or an alloy of them.    
     
     
         41 . The magnetoresistive effect element according to  claim 38 , wherein the dielectric layer and the tunnel barrier layer comprises Al 2 O 3 , SiO 2 , MgO, AlN, SiON, or AlON.  
     
     
         42 . The magnetoresistive effect element according to  claim 38 , wherein at least one of the first and second magnetization pinned layers has a three-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer, or a five-layer structure comprising a magnetic layer/a non-magnetic layer/a magnetic layer/a non-magnetic layer/a magnetic layer.  
     
     
         43 . A magnetic memory comprising: 
 a memory cell comprising a magnetoresistive effect element according to  claim 1;     a first wiring electrically connected to one end of the magnetoresistive effect element; and    a second wiring electrically connected to the other end of the magnetoresistive effect element.    
     
     
         44 . A magnetic memory comprising: 
 a memory cell comprising a magnetoresistive effect element according to  claim 9;     a first wiring electrically connected to one end of the magnetoresistive effect element; and    a second wiring electrically connected to the other end of the magnetoresistive effect element.    
     
     
         45 . A magnetic memory comprising: 
 a memory cell comprising a magnetoresistive effect element according to  claim 16;     a first wiring electrically connected to one end of the magnetoresistive effect element; and    a second wiring electrically connected to the other end of the magnetoresistive effect element.    
     
     
         46 . A magnetic memory comprising: 
 a memory cell comprising a magnetoresistive effect element according to  claim 24;     a first wiring electrically connected to one end of the magnetoresistive effect element; and    a second wiring electrically connected to the other end of the magnetoresistive effect element.    
     
     
         47 . A magnetic memory comprising: 
 a memory cell comprising a magnetoresistive effect element according to  claim 30;     a first wiring electrically connected to one end of the magnetoresistive effect element; and    a second wiring electrically connected to the other end of the magnetoresistive effect element.    
     
     
         48 . A magnetic memory comprising: 
 a memory cell comprising a magnetoresistive effect element according to  claim 38;     a first wiring electrically connected to one end of the magnetoresistive effect element; and    a second wiring electrically connected to the other end of the magnetoresistive effect element.