US2007004229A1PendingUtilityA1

Lamination of organic semiconductors

Assignee: MALAJOVICH IRINAPriority: Jul 22, 2003Filed: Jul 26, 2006Published: Jan 4, 2007
Est. expiryJul 22, 2023(expired)· nominal 20-yr term from priority
Y10T156/1705H10K 85/615H10K 71/16H10K 85/113H10K 71/18H10K 71/50H10K 85/649H10K 10/466H10K 10/00
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Claims

Abstract

Low temperature, ambient pressure processes are desired for fabrication of transistors on flexible polymer substrates. Lamination of semiconductors is such a process. The semiconductor is deposited on a donor substrate. The donor is positioned over a receiver substrate, which may be patterned with additional transistor elements. The semiconductor is transferred from the donor to the receiver by lamination.

Claims

exact text as granted — not AI-modified
1 . (canceled)  
     
     
         2 . (canceled)  
     
     
         3 . An electronic device comprising an organic semiconductor laminated on a receiver substrate.  
     
     
         4 . The electronic device of  claim 3  where the device is a transistor.  
     
     
         5 . The electronic device of  claim 3  where the receiver substrate is a flexible polymer.  
     
     
         6 . The electronic device of  claim 4  where the receiver substrate is a flexible polymer.  
     
     
         7 . An electronic device comprising at least one drop of a dried solution of an organic semiconductor wherein the drop was laminated on a receiver substrate.  
     
     
         8 . The electronic device of  claim 7  wherein the receiver substrate is a flexible polymer.  
     
     
         9 . The electronic device of  claim 7  wherein the organic semiconductor is selected from pentacene, alpha, alpha′-bis-4(n-hexyl)phenyl bitiophene and polythiophene.

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