Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device

Abstract

An optical system (in FIGS. 1 A and 1 B) wherein a rectilinear laser beam of homogeneous energy distribution is defined for annealing a non-single crystalline semiconductor film (a surface to-be-irradiated 1108 ), is constructed of reflectors ( 1106, 1107 etc.) easily and inexpensively without including lenses of transmission type. The rectilinear laser beam can be defined having a length of at least 600 (mm) which corresponds to the shorter latus of a large-sized substrate for mass production.

1 . A method for manufacturing a semiconductor device comprising: 
 forming a non-single crystalline semiconductor film over a substrate;    emitting a laser beam;    splitting the laser beam by at least two beam-splitting reflectors each including a plurality of parabolic mirrors;    combining the split laser beams into a laser beam on an irradiation surface; and    irradiating the non-single crystalline semiconductor film with the laser beam.    
   
   
       2 . A method for manufacturing a semiconductor device according to  claim 1 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YV 0   4  laser, a YLF laser, and an Ar laser.  
   
   
       3 . A method for manufacturing a semiconductor device according to  claim 1 , wherein the semiconductor device is an active matrix type EL display device.  
   
   
       4 . A method for manufacturing a semiconductor device according to  claim 1 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.  
   
   
       5 . A method for manufacturing a semiconductor device comprising: 
 forming a non-single crystalline semiconductor film over a substrate;    emitting a laser beam;    splitting the laser beam by a first beam-splitting reflector including a plurality of parabolic mirrors, and a second beam-splitting reflector including a plurality of plane mirrors,    combining the split laser beams into a laser beam on an irradiation surface; and    irradiating the non-single crystalline semiconductor film with the laser beam.    
   
   
       6 . A method for manufacturing a semiconductor device according to  claim 5 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4  laser, a YLF laser, and an Ar laser.  
   
   
       7 . A method for manufacturing a semiconductor device according to  claim 5 , wherein the semiconductor device is an active matrix type EL display device.  
   
   
       8 . A method for manufacturing a semiconductor device according to  claim 5 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.  
   
   
       9 . A method for manufacturing a semiconductor device comprising: 
 forming a non-single crystalline semiconductor film over a substrate;    emitting a laser beam;    splitting the laser beam by at least two beam-splitting reflectors each including a plurality of parabolic mirrors;    combining the split laser beams into a laser beam on an irradiation surface;    setting the substrate on a stage; and    irradiating the non-single crystalline semiconductor film with the laser beam while moving the stage.    
   
   
       10 . A method for manufacturing a semiconductor device according to  claim 9 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4  laser, a YLF laser, and an Ar laser.  
   
   
       11 . A method for manufacturing a semiconductor device according to  claim 9 , wherein the semiconductor device is an active matrix type EL display device.  
   
   
       12 . A method for manufacturing a semiconductor device according to  claim 9 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.  
   
   
       13 . A method for manufacturing a semiconductor device comprising: 
 forming a non-single crystalline semiconductor film over a substrate;    emitting a laser beam;    splitting the laser beam by a first beam-splitting reflector including a plurality of parabolic mirrors, and a second beam-splitting reflector including a plurality of plane mirrors,    combining the split laser beams into a laser beam on an irradiation surface;    setting the substrate on a stage; and    irradiating the non-single crystalline semiconductor film with the laser beam while moving the stage.    
   
   
       14 . A method for manufacturing a semiconductor device according to  claim 13 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4  laser, a YLF laser, and an Ar laser.  
   
   
       15 . A method for manufacturing a semiconductor device according to  claim 13 , wherein the semiconductor device is an active matrix type EL display device.  
   
   
       16 . A method for manufacturing a semiconductor device according to  claim 13 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.