US2007001184A1PendingUtilityA1

Light-emitting device with built-in microlens and method of forming the same

Assignee: SANYO ELECTRIC COPriority: Aug 9, 2002Filed: Apr 3, 2006Published: Jan 4, 2007
Est. expiryAug 9, 2022(expired)· nominal 20-yr term from priority
H10H 20/855H10H 20/84G02B 6/4206G02B 6/4203H01S 5/0267H01S 5/4025H01S 5/4087
49
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A light-emitting device with a built-in microlens having a microlens integrated with a semiconductor light-emitting device causing no misalignment of an optical axis is provided. This light-emitting device with a built-in microlens comprises a semiconductor light-emitting device and a microlens, integrated with the semiconductor light-emitting device, formed through light emitted from the semiconductor light-emitting device. Thus, the optical axis of the microlens is automatically aligned in formation of the microlens.

Claims

exact text as granted — not AI-modified
1 - 14 . (canceled)  
     
     
         15 . A method of forming a light-emitting device with a built-in microlens, comprising steps of: 
 forming a photosensitive material on an emission surface of a semiconductor light-emitting device; and    forming a microlens integrated with said semiconductor light-emitting device by irradiating said photosensitive material with light emitted from said semiconductor light-emitting device thereby reacting said photosensitive material.    
     
     
         16 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , wherein 
 said step of forming said microlens includes a step of forming such a graded index microlens that the refractive index of a photo-irradiated portion of said photosensitive material is larger than the refractive index of the remaining unirradiated portion of said photosensitive material.    
     
     
         17 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , wherein 
 said step of forming said microlens includes a step of forming a convex microlens by irradiating said photosensitive material with said light emitted from said semiconductor light-emitting device and thereafter etching a prescribed region of said photosensitive material.    
     
     
         18 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , wherein 
 said step of forming said microlens includes a step of forming a concave microlens by irradiating said photosensitive material with said light emitted from said semiconductor light-emitting device thereby evaporating said photosensitive material.    
     
     
         19 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , further comprising a step of performing heat treatment at a temperature around the glass transition temperature of said photosensitive material before irradiating said photosensitive material with said light emitted from said semiconductor light-emitting device, wherein 
 said step of forming said microlens includes a step of forming a graded index microlens having a convex shape by irradiating said photosensitive material with said light emitted from said semiconductor light-emitting device after said step of performing heat treatment.    
     
     
         20 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , further comprising a step of forming a transparent insulating spacer on said emission surface of said semiconductor light-emitting device before forming said photosensitive material on said emission surface of said semiconductor light-emitting device.  
     
     
         21 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , further comprising steps of: 
 forming a first antireflection coating on said emission surface of said semiconductor light-emitting device before forming said photosensitive material on said emission surface of said semiconductor light-emitting device, and    forming a second antireflection coating on the surface of said photosensitive material after forming said photosensitive material on said emission surface of said semiconductor light-emitting device.    
     
     
         22 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , wherein 
 said microlens consists of a photosensitive material of either chalcogenide glass or photoreactive organic matter.    
     
     
         23 . A method of forming a light-emitting device with a built-in microlens, comprising steps of: 
 arranging a photosensitive material in the vicinity of an emission surface of a semiconductor light-emitting device; and    forming a convex microlens integrated with said semiconductor light-emitting device by irradiating said photosensitive material with light emitted from said semiconductor light-emitting device thereby evaporating said photosensitive material.    
     
     
         24 . The method of forming a light-emitting device with a built-in microlens according to  claim 23 , wherein 
 said microlens consists of a photosensitive material of either chalcogenide glass or photoreactive organic matter.    
     
     
         25 . The method of forming a light-emitting device with a built-in microlens according to  claim 15 , wherein 
 said step of forming said microlens includes a step of forming said microlens for each of a plurality of emission parts of said semiconductor light-emitting device having said plurality of emission parts.

Join the waitlist — get patent alerts

Track US2007001184A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.