Method for forming barrier metal of semiconductor device

Abstract

A method for forming a barrier metal of a semiconductor device includes forming an insulating layer on a semiconductor substrate and forming an opening in the insulating layer and forming a TiSiN layer having a desired thickness by repeatedly performing a process of forming a TiSiN layer having an atomic layer thickness in a reaction chamber. The process of forming a TiSiN layer having an atomic layer thickness includes performing deposition of a SiH 4 layer inside the opening and on the insulating layer using an atomic layer deposition process, discharging a gas remaining in the reaction chamber by using an inert gas, performing deposition of a certain precursor layer on the SiH 4 layer, and discharging a gas of precursor material remaining in the reaction chamber by using an inert gas. The method of forming a barrier metal further includes performing plasma processing for the TiSiN layer so as to remove impurities contained in the TiSiN layer.

1 . A method for forming a barrier metal of a semiconductor device, comprising: 
 forming an insulating layer on a semiconductor substrate and forming an opening in the insulating layer,    forming a TiSiN layer having a desired thickness by repeatedly performing a process of forming a TiSiN layer having an atomic layer thickness in a reaction chamber, wherein the process of forming a TiSiN layer having an atomic layer thickness comprises 
 performing deposition of a SiH 4  layer inside the opening and on the insulating layer using an atomic layer deposition process,  
 discharging a gas remaining in the reaction chamber by using an inert gas,  
   performing deposition of a certain precursor layer on the SiH 4  layer, and    discharging a gas of precursor material remaining in the reaction chamber by using an inert gas; and    performing plasma processing for the TiSiN layer so as to remove impurities contained in the TiSiN layer.    
   
   
       2 . The method of  claim 1 , wherein the SiH 4  layer is deposited using a SiH 4  gas.  
   
   
       3 . The method of  claim 2 , wherein the precursor layer is formed by any one of a Tetrakis DiMethyl Amido Titanium (TDMAT) layer, a Tetrakis DiEthyl Amido Titanium (TDEAT) layer and a TiCl 4  layer.  
   
   
       4 . The method of  claim 3 , wherein the TiSiN layer having the atomic layer thickness is formed by reacting the precursor layer by thermal decomposition at a temperature ranging from 350 to 450° C.  
   
   
       5 . The method of  claim 1 , wherein the precursor layer is formed by any one of a Tetrakis DiMethyl Amido Titanium (TDMAT) layer, a Tetrakis DiEthyl Amido Titanium (TDEAT) layer and a TiCl 4  layer.  
   
   
       6 . The method of  claim 5 , wherein the TiSiN layer having the atomic layer thickness is formed by reacting the precursor layer by thermal decomposition at a temperature ranging from 350 to 450° C.  
   
   
       7 . The method of  claim 1 , wherein the TiSiN layer is plasma processed so as to remove CH based impurities contained in the TiSiN layer.  
   
   
       8 . The method of  claim 7 , wherein the TiSiN layer is plasma processed under any one atmosphere of a nitrogen gas and a hydrogen gas, or an ammonia gas.  
   
   
       9 . The method of  claim 1 , wherein the opening is formed into any one of a contact hole and a via hole.  
   
   
       10 . The method of  claim 1 , wherein the inert gas is a nitrogen or argon gas.  
   
   
       11 . The method of  claim 1 , wherein a pressure of the reaction chamber is between 90 and 300 Torr.