Laser assisted material deposition

Abstract

Electronic devices and systems are provided with material structured from irradiation of a gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

1 . An electronic device comprising: 
 a substrate;    a circuit disposed on the substrate, the circuit having a material and a material by-product, the circuit having an amount of the material by-product incorporated in the circuit, the amount of the material by-product being a controlled amount, the material by-product having a composition associated with the material.    
   
   
       2 . The electronic device of  claim 1 , wherein the material by-product is structured from irradiation of a gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.  
   
   
       3 . The electronic device of  claim 1 , wherein the substrate is a semiconductor substrate.  
   
   
       4 . The electronic device of  claim 1 , wherein the substrate is a gallium arsenide substrate.  
   
   
       5 . An electronic device comprising: 
 a substrate;    a circuit disposed on the substrate;    an active device disposed in the circuit, the active device having a material and a material by-product, the active device having an amount of the material by-product incorporated in the active device, the amount of the material by-product being a controlled amount, the material by-product having a composition associated with the material.    
   
   
       6 . The electronic device of  claim 5 , wherein the material by-product is structured from illumination of a gas reactant with a laser beam at a frequency targeted to an absorption frequency of the gas reactant.  
   
   
       7 . The electronic device of  claim 5 , wherein the circuit is disposed in a stand alone integrated circuit.  
   
   
       8 . The electronic device of  claim 5 , wherein the substrate includes a silicon-on-insulator substrate.  
   
   
       9 . The electronic device of  claim 5 , wherein the substrate includes an organic substrate.  
   
   
       10 . A memory device comprising: 
 a substrate;    an array of memory cells; and    control circuitry to access and retrieve data from the array of memory cells, the array of memory cells and the control circuitry having a number of active devices, an active device of the number active devices having a material and a material by-product, the active device having an amount of the material by-product incorporated in the active device, the amount of the material by-product being a controlled amount, the material by-product having a composition associated with the material.    
   
   
       11 . The memory device of  claim 10 , wherein the material by-product is structured from exposure of a gas flow to a laser beam at a frequency correlated to an absorption frequency of a gas precursor in the gas flow.  
   
   
       12 . The memory device of  claim 10 , wherein the substrate is a ceramic substrate.  
   
   
       13 . The memory device of  claim 10 , wherein the substrate is silicon-based substrate.  
   
   
       14 . The memory device of  claim 10 , wherein the substrate is an organic substrate.  
   
   
       15 . A system comprising: 
 a controller;    a bus; and    a memory device, wherein one or more of the processor, the bus, or the memory device includes a circuit disposed on a substrate, the circuit having a material and a material by-product, the circuit having an amount of the material by-product incorporated in the circuit, the amount of the material by-product being a controlled amount, the material by-product having a composition associated with the material.    
   
   
       16 . The system of  claim 15 , wherein the material by-product is structured from irradiation of a gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.  
   
   
       17 . The system of  claim 15 , wherein the substrate is an organic substrate.  
   
   
       18 . The system of  claim 15 , wherein the system includes an information handling system.  
   
   
       19 . The system of  claim 15 , wherein the controller is a processor.  
   
   
       20 . The system of  claim 15 , wherein the system includes a wireless system.