Light emitting device having protrusion and recess structure and method of manufacturing same

Abstract

The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.

1 . A semiconductor light emitting device having a protrusion and recess structure, the device comprising: 
 a lower clad layer disposed on a substrate;    an active layer formed on one portion of a top surface of the lower clad layer;    an upper clad layer formed on the active layer;    a first electrode formed on the upper clad layer; and    a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.    
     
     
         2 . The semiconductor light emitting device of  claim 1 , wherein the second electrode surrounds the portion of the top surface of the lower clad electrode occupied by the active layer.  
     
     
         3 . The semiconductor light emitting device of  claim 1 , wherein the substrate is a sapphire substrate.  
     
     
         4 . The semiconductor light emitting device of  claim 1 , wherein the lower clad layer and the upper clad layer are formed of gallium nitride-based materials.  
     
     
         5 . The semiconductor light emitting device of  claim 1 , wherein the first electrode includes at least one material selected from the group consisting of Ag, Al, Rh, Pd, Ni, and Pt.  
     
     
         6 . The semiconductor light emitting device of  claim 1 , wherein the second electrode includes at least one material selected from the group consisting of Al, Cr, Ti, and Au.  
     
     
         7 . The semiconductor light emitting device of  claim 1 , wherein the thickness of the lower clad layer is 1 to 10 μm.  
     
     
         8 . The semiconductor light emitting device of  claim 1 , wherein the width of the protrusion and recess structure is 0.1 to 10 μm and the height of the protrusion and recess structure is 0.1 to 10 μm.  
     
     
         9 . A method of manufacturing a semiconductor light emitting device having a protrusion and recess structure, the method comprising: 
 forming a lower clad layer on a substrate;    forming an active layer and an upper clad layer on the lower clad layer;    forming a protrusion and recess structural pattern on a portion of the top surface of the upper clad layer by etching a portion of the lower clad layer; and    forming a first electrode on the upper clad layer and forming a second electrode on the protrusion and recess structural pattern of the lower clad layer.    
     
     
         10 . The method of  claim 9 , wherein the forming of the protrusion and recess structural pattern comprises: 
 exposing the portion of the lower clad layer using a first etching process; and    forming the protrusion and recess structure using a second etching process.    
     
     
         11 . The method of  claim 10 , wherein the second etching process is one of a dry etching process and a wet etching process.  
     
     
         12 . The method of  claim 11 , wherein the wet etching process is performed using one of an aqueous H 3 PO 4  solution and an aqueous KOH solution.  
     
     
         13 . The method of  claim 11 , wherein the wet etching process is performed in a range of 100 to 300° C.  
     
     
         14 . The method of  claim 9 , wherein forming of the protrusion and recess structural pattern comprises forming of the protrusion and recess structural pattern all the way around a portion of the lower clad layer occupied by the active layer.