Plasma processing apparatus

Abstract

A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.

1 - 17 . (canceled)  
   
   
       18 . A plasma processing apparatus, comprising: 
 a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;    an evacuation system coupled to said processing vessel;    a plasma gas supply part for supplying plasma gas to an interior of said processing vessel;    a microwave antenna provided on said processing vessel; and    a process gas supply part provided between said substrate to be processed on said stage and said plasma gas supply part so as to face said substrate to be processed on said stage,    wherein said process gas supply part comprises: 
 a first component comprising a plurality of first apertures configured to provide flow communication for passing plasma formed in the interior of said processing vessel, a process gas passage capable of connecting to a process gas source, and a plurality of second apertures in flow communication with said process gas passage; and  
 a second component comprising a plurality of third apertures corresponding to and being in substantially axial alignment with said first apertures of said first component and a plurality of diffusion surfaces upon recessed areas of said second component positioned opposite to said second apertures in said first component,  
 wherein said first component and said second component comprise a first member and a second member, respectively, and a coolant passage is provided in said second member.  
   
   
   
       19 . A plasma processing apparatus, comprising: 
 a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;    an evacuation system coupled to said processing vessel;    a plasma gas supply part for supplying plasma gas to an interior of said processing vessel;    a microwave antenna provided on said processing vessel in correspondence to said substrate to be processed on said stage; and    a process gas supply part provided between said substrate to be processed on said stage and said plasma gas supply part so as to face said substrate to be processed on said stage, 
 wherein said process gas supply part comprises: 
 a first component comprising a plurality of first apertures configured to provide flow communication for passing plasma formed in the interior of said processing vessel, a process gas passage capable of connecting to a process gas source, and a plurality of second apertures in flow communication with said process gas passage; and  
 a second component comprising a plurality of third apertures corresponding to and being in substantially axial alignment with said first apertures of said first component and a plurality of diffusion surfaces upon recessed areas of said second component positioned opposite to said second apertures in said first component,  
 
 wherein said plurality of second aperture are configured to release said process gas in a slanting direction.  
   
   
   
       20 . A plasma processing apparatus, comprising: 
 a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;    an evacuation system coupled to said processing vessel; a plasma gas supply part for supplying plasma gas to an interior of said processing vessel;    a microwave window formed of a dielectric material and provided on a part of said outer wall of said processing vessel so as to face said substrate to be processed on said stage and;    a microwave antenna coupled to said microwave window;    a process gas supply part provided between said substrate to be processed on said stage and said plasma gas supply part so as to face said substrate to be processed on said stage; and    a temperature control part controlling a surface temperature of said microwave window around 150° C. with respect to a side faced on said substrate to be processed on said stage.    
   
   
       21 . The microwave plasma processing apparatus as claimed in  claim 20 , wherein said temperature control part is provided on said microwave antenna and controls a temperature of said microwave window via said microwave antenna.  
   
   
       22 . The microwave plasma processing apparatus as claimed in  claim 20 , wherein said microwave window is a shower plate formed of a dielectric plate forming said plasma gas supply part.