Substrate treating apparatus and substrate treating method

Abstract

A substrate treating apparatus includes a spin chuck for supporting a substrate to be rotatable in a plane including a principal surface of the substrate, a motor for rotating the spin chuck, a circulating pump for circulating a removal liquid and transmitting the removal liquid to a first nozzle, and a heater for heating the removal liquid in circulation. When removing a reaction product, the spin chuck is rotated at a rotational frequency of at least 100 rpm and not exceeding 3,000 rpm, and the first nozzle supplies the removal liquid at a rate of at least 50 ml per minute to the surface of the substrate supported and rotated by the spin chuck.

1 - 10 . (canceled)  
   
   
       11 . A substrate treating method for removing an organic substance from a substrate by using a heated removal liquid capable of removing organic substances, said method comprising the steps of: 
 rotating the substrate in a plane including a principal surface of the substrate at a rotational frequency of at least 100 rpm; and    supplying the removal liquid at a rate of at least 50 ml per minute to the substrate in rotation so that said removal liquid heats said substrate and does not substantially cool while on the substrate.    
   
   
       12 . A substrate treating method as defined in  claim 11 , wherein said organic substance is a reaction product resulting from a change in property of a resist.  
   
   
       13 . A substrate treating method as defined in  claim 12 , wherein said reaction product results from a dry etching with a resist film used as a mask.  
   
   
       14 . A substrate treating method as defined in  claim 11 , wherein said substrate is an 8-inch type, and the removal liquid is supplied at a rate of 150 ml to 500 ml per minute to the substrate.  
   
   
       15 . A substrate treating method as defined in  claim 11 , wherein said substrate is a 12-inch type, and the removal liquid is supplied at a rate of 200 ml to 1,000 ml per minute to the substrate.  
   
   
       16 . A substrate treating method for removing an organic substance from a substrate by using a removal liquid capable of removing organic substances, said method comprising the steps of: 
 rotating the substrate in a plane including a principal surface of the substrate at a rotational frequency of at least 100 rpm;    supplying the removal liquid at a rate of at least 50 ml per minute to the substrate in rotation;    wherein said organic substance is a reaction product resulting from a change in property of a resist.    
   
   
       17 . A substrate treating method as defined in  claim 16 , wherein said reaction product results from a dry etching with a resist film used as a mask.  
   
   
       18 . A substrate treating method as defined in  claim 11 , wherein said removal liquid is heated to a range of 50-80 degrees centigrade.