Abrasive compounds for semiconductor planarization

Abstract

A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 μm or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 μm or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.

1 . A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of at least 3 μm is not more than 500 ppm in a solid.  
   
   
       2 . The polishing slurry for semiconductor planarization according to  claim 1 , further containing a dispersing agent.  
   
   
       3 . The polishing slurry for semiconductor planarization according to  claim 1  or  2 , wherein the particle diameter is not more than 1 μm in 99% by volume of the whole cerium oxide particles.