Method for large-area patterning dissolved polymers by making use of an active stamp

Abstract

A method of patterning soluble materials on a substrate is described. In the method, a stamp is applied to a liquid carrier solution. The raised areas of the stamp removes mainly a liquid carrier leaving behind a precipitate while the non-raised areas of the stamp lifts both the liquid carrier and the precipitate from the substrate. The result is a precipitate pattern residue that matches the raised area of the stamp. One use of the method is for patterning large areas of polymers used in large area electronics such as displays and sensors.

1 . A method of forming a stamp comprising: 
 forming a relief pattern on a stamp, the relief pattern including raised portions and recessed portions; and,    treating the relief pattern such that the raised portions have a lower surface energy than walls surrounding the recessed portions of the relief pattern.    
     
     
         2 . The method of  claim 1  wherein the treating of the relief pattern comprises: 
 treating the raised portions with a first compound and treating the walls surrounding the recessed portions of the relief pattern with a second compound.    
     
     
         3 . The method of  claim 2  wherein the first compound and the second compound are chlorosilane compounds.  
     
     
         4 . A structure for forming a patterned surface feature comprising: 
 a stamp including a relief pattern, the relief pattern including raised portions and recessed portions, the raised portions of the relief pattern having a lower surface energy than walls surrounding the recessed portions of the relief pattern.    
     
     
         5 . The structure of  claim 4  wherein the raised portions of the stamp are treated with a first compound and the walls surrounding the recessed portions of the relief pattern are treated with a second compound.  
     
     
         6 . The structure of  claim 5  wherein the first compound and the second compound are chlorosilane compounds.  
     
     
         7 . The structure of  claim 4  further comprising: 
 a substrate including a liquid carrier solution carrying a precipitate formed over the substrate, the stamp in contact with the liquid carrier solution such that the raised portions of the relief pattern absorbs the liquid carrier leaving a precipitate layer between the raised portions of the relief pattern and the substrate, the nonraised-portions of the relief pattern drawing the liquid carrier solution including both the liquid carrier and the precipitate away from the substrate surface.    
     
     
         8 . The structure of  claim 4  further comprising: 
 a substrate including a remaining precipitate between the raised portions of the relief pattern and the substrate, the nonraised portions of the relief pattern having absorbed an absorbed precipitate and a liquid carrier carrying the absorbed precipitate.    
     
     
         9 . The structure of  claim 7  wherein the precipitate is a polymer that is dissolved in a solvent.  
     
     
         10 . The structure of  claim 8  wherein the remaining precipitate is part of an electronic device structure.  
     
     
         11 . The structure of  claim 7  further comprising: 
 a gas flow through the non-raised portions of the relief pattern, the gas flow generating a pressure differential that moves the liquid carrier solution into the nonraised portions of the relief pattern    
     
     
         12 . The structure of  claim 4  wherein the raised portions of the relief pattern have a higher hydrophobicity than non-raised portions of the relief pattern.  
     
     
         13 . The structure of  claim 12  wherein the different hydrophobicities create a pressure differential to move a liquid carrier and precipitate into non-raised portions of the relief pattern.  
     
     
         14 . The structure of  claim 4  wherein the stamp is a polydimethylsiloxane (PDMS) stamp that is treated with a plasma that oxidized the PDMS surface allowing it to react with a reactive solution that reduces the surface energy of the non-raised portions of the relief pattern.  
     
     
         15 . The structure of  claim 4  wherein the lateral distance between the walls surrounding the non-raised areas of the relief pattern do not exceed 200 micrometers.  
     
     
         16 . The structure of  claim 7  wherein capillary action pulls the liquid carrier solution into the nonraised portions of the relief pattern for absorption by the non-raised portions of the relief pattern.