US2006275577A1PendingUtilityA1
Phase-change optical recording medium
Est. expiryOct 29, 2023(expired)· nominal 20-yr term from priority
Inventors:Tsukasa NakaiSumio AshidaKeiichiro YusuTakayuki TsukamotoNoritake OomachiNaomasa NakamuraKatsutaro IchiharaUrara Ichihara
G11B 7/252G03G 5/147G11B 2007/24306G03G 9/0821G03G 9/097G11B 2007/24312G03G 5/14726G11B 2007/25706G11B 2007/24328G11B 2007/24314G11B 2007/25711G11B 7/256G11B 7/259G11B 7/2403G11B 2007/24308G11B 7/2534G03G 5/14756G11B 2007/25715G11B 2007/2432G11B 2007/2571G11B 2007/24316Y10T428/21G11B 2007/25713G11B 7/2578G11B 7/24038
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Claims
Abstract
A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).
Claims
exact text as granted — not AI-modified1 . A phase-change optical recording medium, comprising:
a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light; and an interface film formed in contact with at least one surface of the recording film, the interface film comprising: at least one element selected from the group A consisting of titanium (Ti), niobium (Nb), zinc (Zn), praseodymium (Pr), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) and ruthenium (Ru); oxygen (O); silicon (Si); and at least one element selected from the group B consisting of carbon (C) and nitrogen (N).
2 . The phase-change optical recording medium according to claim 1 , wherein the interface film has an extinction coefficient of 1×10 −4 or less.
3 . The phase-change optical recording medium according to claim 1 , wherein the recording film is represented by the general formula:
Ge x Sb y Te z , where x+y+z=100, and wherein the recording film has a composition within a range defined by x=55, z=45; x=45, z=55; x=10, y=28, z=42; and x=10, y=36, z=54 on the ternary phase diagram of GeSbTe.
4 . The phase-change optical recording medium according to claim 3 , wherein Bi and/or Sn is substituted for a part of the constituent elements of the recording film, and wherein the recording film has a composition represented by the general formula:
(Ge w Sb (1-w) ) x (Sb v Bi (1-v) ) y Te z , where x+y+z=100, 0≦w<0.5 and 0≦v<1.0.
5 . The phase-change optical recording medium according to claim 1 , wherein the recording film is represented by the general formula:
Ge x Bi y Te z , where x+y+z=100, and wherein the recording film has a composition within a range defined by x=55, z=45; x=45, z=55; x=10, y=28, z=42; and x=10, y=36, z=54 on the ternary phase diagram of GeBiTe.Join the waitlist — get patent alerts
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