Ultraviolet curing process for low k dielectric films

Abstract

Processes for forming a low k dielectric material onto a surface of a substrate comprises depositing the low k dielectric material onto the surface; and exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a mechanical property of the low k dielectric material, wherein the mechanical property is significantly improved compared to a corresponding mechanical property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is furnace cured, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure, wherein excessive activating energy comprises an excessive hotplate bake sequence, a furnace cure, an annealing cure, a multi-temperature cure process or plasma treatment prior to the ultraviolet radiation.

1 . A process for forming a low k dielectric material coated onto a surface of a substrate, comprising: 
 depositing the low k dielectric material onto the surface, wherein the low k material comprises a catalyst and/or chemical reactant and; and    exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a mechanical property of the low k dielectric material, wherein the mechanical property increases relative to a corresponding mechanical property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is furnace cured, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure.    
     
     
         2 . The process of  claim 1 , wherein excessive activating energy originates from a high multi-temperature bake process, a furnace cure, an annealing cure, a plasma exposure, electron beam exposure, chemical exposure or a multi-temperature cure process prior to the ultraviolet radiation  
     
     
         3 . The process of  claim 1 , wherein depositing the low k dielectric material comprises spin coating a solution containing the low k dielectric material.  
     
     
         4 . The process of  claim 1 , wherein depositing the low k material comprises chemical vapor deposition.  
     
     
         5 . The process of  claim 1 , wherein the activation energy exposure is minimized such that the catalyst and/or chemical reactant remains active prior to ultraviolet radiation exposure.  
     
     
         6 . The process of  claim 5 , wherein the catalyst and/or chemical reactant is introduced subsequent to exposure of the low k dielectric to any activation energy, but prior to, or simultaneously with, exposure of the low k material to the ultraviolet radiation.  
     
     
         7 . The process of  claim 1 , wherein the ultraviolet radiation pattern comprises wavelengths greater than 100 nanometers to less than 400 nanometers.  
     
     
         8 . The process of  claim 1 , further comprising heating the substrate during and/or subsequent to exposing the low k dielectric material to the ultraviolet radiation.  
     
     
         9 . The process of  claim 1 , wherein the low k dielectric material comprises hydrogen silsesquioxane, alkyl silsesquioxanes, carbon doped oxides, fluorosilicate glasses, diamond-like carbons, parylenes, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based materials, polyphenylene-based materials, polyarylene ethers, polyimides, fluorinated polyimides, porous silicas, silica zeolites and combinations comprising at least one of the foregoing.  
     
     
         10 . The process of  claim 1 , wherein the low k dielectric material has substantially the same dielectric constant before and after exposure to the ultraviolet radiation.  
     
     
         11 . The process of  claim 1 , wherein exposing the low k dielectric material to the ultraviolet radiation decreases the dielectric constant.  
     
     
         12 . The process of  claim 1 , wherein the mechanical property comprises an elastic modulus property, a hardness property, or a combination thereof.  
     
     
         13 . The process of  claim 1 , wherein the elastic modulus property, and/or a hardness property increases by at least 40% relative to a corresponding elastic modulus property, and/or a hardness property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is furnace cured, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure.  
     
     
         14 . The process of  claim 1 , wherein the elastic modulus property, and/or a hardness property increases by at least 50% relative to a corresponding elastic modulus property, and/or a hardness property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is furnace cured, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure.  
     
     
         15 . A process for forming a low k dielectric material coated onto a surface of a substrate, comprising: 
 depositing the low k dielectric material onto the surface wherein the low k material comprises a catalyst and/or chemical reactant and; and    exposing the low k dielectric material to ultraviolet radiation, wherein the steps of depositing and exposing are effective to provide a crosslinking efficiency greater than 97% and form the low k dielectric material.    
     
     
         16 . The process of  claim 15 , wherein the dielectric material has a dielectric constant less than 3.0.  
     
     
         17 . The process of  claim 15 , wherein depositing the low k material comprises spin coating a solution containing the low k dielectric material.  
     
     
         18 . The process of  claim 15 , wherein depositing the low k material comprises chemical vapor deposition.  
     
     
         19 . The process of  claim 15 , further comprising heating the substrate during and/or subsequent to exposing the low k dielectric material to the ultraviolet radiation.  
     
     
         20 . The process of  claim 15 , wherein the low k dielectric material comprises hydrogen silsesquioxane, alkyl silsesquioxanes, carbon doped oxides, fluorosilicate glasses, diamond-like carbons, parylenes, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based materials, polyphenylene-based materials, polyarylene ethers, polyimides, fluorinated polyimides, porous silicas, silica zeolites and combinations comprising at least one of the foregoing.  
     
     
         21 . The process of  claim 15 , wherein the low k dielectric material has substantially the same dielectric constant before and after exposure to the ultraviolet radiation.  
     
     
         22 . The process of  claim 15 , exposing the low k dielectric material to ultraviolet radiation increases an elastic modulus property, a hardness property, or a combination thereof relative to the low k dielectric material free of exposure to ultraviolet radiation.  
     
     
         23 . The process of  claim 15 , wherein the steps of depositing and exposing are effective to maintain activity of the catalyst and/or the chemical reactant during the step of exposing the low k dielectric to the ultraviolet radiation.  
     
     
         24 . A process for forming a low k dielectric material coated onto a surface of a substrate, comprising: 
 depositing the low k dielectric material onto the surface, wherein the low k material comprises a catalyst and/or chemical reactant; and    exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a elastic modulus property of the low k dielectric material, wherein the elastic modulus property is significantly improved compared to a corresponding elastic modulus property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding elastic modulus property of the low k dielectric material that is furnace cured, or the corresponding elastic modulus property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure, wherein excessive activating energy comprises a furnace cure, an annealing cure, or a multi-temperature cure process prior to the ultraviolet radiation.    
     
     
         25 . The process of  claim 24 , wherein the low k dielectric material comprises hydrogen silsesquioxane, alkyl silsesquioxanes, carbon doped oxides, fluorosilicate glasses, diamond-like carbons, parylenes, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based materials, polyphenylene-based materials, polyarylene ethers, polyimides, fluorinated polyimides, porous silicas, silica zeolites and combinations comprising at least one of the foregoing.  
     
     
         26 . The process of  claim 24 , wherein the low k dielectric material has substantially the same dielectric constant before and after exposure to the ultraviolet radiation.  
     
     
         27 . A process for forming a low k dielectric material coated onto a surface of a substrate, comprising: 
 depositing the low k dielectric material onto the surface, wherein the low k material comprises a catalyst and/or chemical reactant; and    exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a hardness property of the low k dielectric material, wherein the hardness property is significantly improved compared to a corresponding hardness property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding hardness property of the low k dielectric material that is furnace cured, or the corresponding hardness property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure, wherein excessive activating energy comprises a furnace cure, an annealing cure, or a multi-temperature cure process prior to the ultraviolet radiation.    
     
     
         28 . The process of  claim 27 , wherein the low k dielectric material comprises hydrogen silsesquioxane, alkyl silsesquioxanes, carbon doped oxides, fluorosilicate glasses, diamond-like carbons, parylenes, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based materials, polyphenylene-based materials, polyarylene ethers, polyimides, fluorinated polyimides, porous silicas, silica zeolites and combinations comprising at least one of the foregoing.  
     
     
         29 . The process of  claim 27 , wherein the low k dielectric material has substantially the same dielectric constant before and after exposure to the ultraviolet radiation.  
     
     
         30 . A process for forming a cured low k dielectric material coated on a substrate, comprising: 
 depositing the low k dielectric material onto the surface, wherein the low k material comprises a catalyst and/or chemical reactant;    avoiding exposure of the low k dielectric material to excessive activating energy from a furnace cure, an annealing cure, or a multi-temperature cure process; and    exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to cure the low k dielectric material.    
     
     
         31 . A process for forming a silica zeolite low k dielectric material, comprising: 
 depositing the silica zeolite low k dielectric material onto a substrate, wherein the silica zeolite low k dielectric material comprises a catalyst;    baking the silica zeolite low k dielectric material at a bake temperature and time effective to maintain an activity of the catalyst; and    exposing the silica zeolite low k dielectric material to ultraviolet radiation for a time and intensity effective to structure the silica zeolite low k dielectric material and render the catalyst inactive.    
     
     
         32 . The process of  claim 31 , wherein the bake temperature is less than or equal to 150° C.  
     
     
         33 . The process of  claim 31 , wherein baking the silica zeolite low k dielectric material comprises exposing the silica zeolite low k dielectric material to the bake temperature and time in a single step.