Three-dimensional structure composed of silicon fine wires, method for producing the same, and device including the same

Abstract

A three-dimensional structure composed of highly-reliable silicon ultrafine wires, a method for producing the three-dimensional structure, and a device including the same are provided. The three-dimensional structure composed of silicon fine wires includes wires (2) on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.

1 . A three-dimensional structure composing silicon fine wires comprising two fine wires on the order of nanometers to micrometers formed by wet-etching utilizing the crystallinity of a single-crystal material, and a tip formed at an intersection of the two wires.  
     
     
         2 . The three-dimensional structure composing silicon fine wires according to  claim 1 , wherein the two wires form a fine coil.  
     
     
         3 . A device comprising a three-dimensional structure composing silicon fine wires, wherein a magnetic field is generated or detected with a fine coil comprising a plurality of fine wires on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.  
     
     
         4 . A device comprising a three-dimensional structure composing silicon fine wires, wherein the temperature in a minute area is measured using the temperature-dependent resistance variation of a fine coil comprising a plurality of fine wires on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.  
     
     
         5 . The device comprising a three-dimensional structure composing silicon fine wires according to  claim 4 , wherein the fine coil is used in visualization of the temperature distribution of planar samples, visualization of the temperature distribution and metabolism of biological materials, and mapping of the temperature distribution of electronic devices.  
     
     
         6 . A device comprising a three-dimensional structure composing silicon fine wires, wherein the interaction or the change in force or mass on the atomic level is detected utilizing the change in amplitude, phase, or self-excited frequency of an oscillator comprising a plurality of fine wires on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.  
     
     
         7 . A device comprising a three-dimensional structure composing silicon fine wires, wherein a sample having a specific particle size is trapped in a network structure comprising a plurality of fine wires on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.  
     
     
         8 . The device comprising a three-dimensional structure composing silicon fine wires according to  claim 7 , being a filter to absorb a specific substance, the filter being formed by modifying the surface of the network structure.  
     
     
         9 . The device comprising a three-dimensional structure composing silicon fine wires according to  claim 7 , wherein the network structure is an elastic body as a whole so that the structure is elastic.  
     
     
         10 . The device comprising a three-dimensional structure composing silicon fine wires according to  claim 7 , wherein the network structure is a three-dimensional optical filter, a grating, or a shielding window.  
     
     
         11 . The device comprising a three-dimensional structure composing silicon fine wires according to  claim 7 , wherein the network structure is a resistor having a grid structure, thereby providing an electrical circuit network.  
     
     
         12 . A device comprising a three-dimensional structure composing silicon fine wires, wherein the three-dimensional structure comprises a plurality of fine wires on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material, and a tip or a block formed at an intersection of the fine wires by the wet etching is used as a probe or a mass to provide the structure with predetermined vibration characteristics.  
     
     
         13 . A device comprising a three-dimensional structure composing silicon fine wires, wherein the device comprises a microscope tip with which an observation portion is readily observed, the tip comprising a plurality of fine wires on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.