Semiconductor device and method of manufacturing the same

Abstract

Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.

1 - 13 . (canceled)  
   
   
       14 . A semiconductor device comprising: 
 a first semiconductor region of a first conductivity type; and    a second semiconductor region of a second conductivity type formed on the first semiconductor region and containing an impurity element of the second conductivity type,    wherein the second semiconductor region includes at least a portion of a region containing a predetermined element which is a group IV element or an element of the second conductivity type larger in mass number than the impurity element; and    the predetermined element has a density distribution in a depth direction, and a value of depth of a maximum point of the density distribution from a surface of the second semiconductor region is smaller than a value of depth of a boundary between the first and second semiconductor regions from the surface of the second semiconductor region.    
   
   
       15 . The device according to  claim 14 , wherein the predetermined element is Si, Ge, Sn, Pb, Ga, In, Tl, Sb, or Bi.  
   
   
       16 . The device according to  claim 14 , wherein a value obtained by adding a value of standard deviation of the density distribution to the value of the depth of the maximum point of the density distribution is smaller than the value of the depth of the boundary between the first and second semiconductor regions.  
   
   
       17 . The device according to  claim 16 , wherein the predetermined element is Si, Ge, Sn, Pb, Ga, In, Tl, Sb, or Bi.  
   
   
       18 - 36 . (canceled)