US2006271896A1PendingUtilityA1

Semiconductor device

Assignee: RENESAS TECH CORPPriority: Jan 29, 1998Filed: Jul 27, 2006Published: Nov 30, 2006
Est. expiryJan 29, 2018(expired)· nominal 20-yr term from priority
H10D 64/257H10D 89/10H10D 84/907
47
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Claims

Abstract

An active area ( 1 ) is provided with a concave part in its corner portion in a shape along a plan view. An insulating film ( 7 ) encloses this active area. A gate electrode ( 30 ) is arranged on a depressed region (DR) having an edge portion which is located on a low position due to the concave part, while a gate electrode ( 20 ) is arranged on an ordinary region (OR) having an edge portion projecting beyond the depressed region. A gate end cap (margin part) of the gate electrode ( 20 ) has a length x, while that of the gate electrode ( 30 ) has a length x+α. Thus provided is a semiconductor device causing no current defect between source/drain regions even if the active area and an insulating film defining this active area fail to satisfy the layout design following refinement of the semiconductor device.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising: 
 an active area being provided with at least one MOS transistor; and    an insulating film defining said active area, wherein    said active area is set in a shape having a concave part in a shape along a plan view,    said active area is provided with:    an ordinary region, and    a depressed region having an edge portion being depressed beyond said ordinary region due to presence of said concave part,    said at least one MOS transistor includes:    a plurality of MOS transistors being arranged on said depressed region and electrically connected in parallel with each other, and    respective gate electrodes of said plurality of MOS transistors are arranged in parallel with each other and electrically connected in common,    so that margin parts of at least a gate electrode being located most approximately to said ordinary region and that adjacent to said gate electrode are connected with each other among said respective gate electrodes of said plurality of MOS transistors.    
   
   
       2 . The semiconductor device in accordance with  claim 1 , wherein all margin parts of said respective gate electrodes of said plurality of MOS transistors are connected with each other.

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