Semiconductor device and method of fabricating the same

Abstract

A semiconductor device includes a semiconductor substrate which has a major surface, and a MOS transistor which has a gate and first and second diffusion regions and which is formed on the major surface. The semiconductor device also includes a laminated structure of an SOG layer, wherein the laminated structure is composed of a base layer and a surface layer formed on the base layer. The laminated structure is formed over the MOS transistor, and the surface layer is denser than the base layer.

1 . A semiconductor device comprising: 
 a semiconductor substrate which has a major surface;    an MOS transistor which has a gate and first and second diffusion regions, the MOS transistor formed on the major surface; and    a laminated structure of an SOG layer, said laminated structure composed of a base layer and a surface layer formed on the base layer, and over the MOS transistor, the surface layer being denser than the base layer.    
     
     
         2 . The semiconductor device of  claim 1 , wherein the laminated structure has a first contact hole defined therein, the first contact hole exposing the first diffusion region of the MOS transistor, 
 wherein a first conductive material is formed within the first contact hole.    
     
     
         3 . The semiconductor device of  claim 2 , wherein the first diffusion region is a source or a drain of the MOS transistor.  
     
     
         4 . The semiconductor device of  claim 2 , wherein the laminated structure has a second contact hole defined therein, the second contact hole exposing the second diffusion region of the MOS transistor, 
 wherein a second conductive material is formed within the second contact hole.    
     
     
         5 . The semiconductor device of  claim 4 , wherein the second diffusion region is a source or a drain of the MOS transistor.  
     
     
         6 . The semiconductor device of  claim 5 , wherein the first conductive material is a bit line and the second conductive material is an electrode of a capacitor.