Systems and methods for forming metal-containing layers using vapor deposition processes

Abstract

A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heteroleptic precursor compounds that include, for example, guanidinate, phosphoguanidinate, isoureate, thioisoureate, and/or selenoisoureate ligands using a vapor deposition process is provided.

1 - 55 . (canceled)  
   
   
       56 . A vapor deposition apparatus comprising: 
 a deposition chamber having a substrate positioned therein; and    at least one vessel comprising at least one precursor compound of the formula (Formula I):                          wherein:    M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;    E is XR 3  or YR 3 R 4 , wherein X is O, S, or Se, and Y is N or P;    each R 1 , R 2 , and R 3  is independently an organic group;    R 4  is hydrogen or an organic group;    L is an anionic supporting ligand;    n is the oxidation state of M; and    x is 0 to n−1.    
   
   
       57 . The apparatus of  claim 56  further comprising at least one source of at least one reaction gas.  
   
   
       58 . The apparatus of  claim 56  further comprising at least one source of an inert gas.  
   
   
       59 . A precursor composition for use in a vapor deposition process comprising at least one compound of the formula (Formula I):  
     
       
         
         
             
             
         
       
     
     wherein: 
 M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;  
 E is OR 3 ;  
 each R 1 , R 2 , and R 3  is independently an organic group;  
 L is an anionic supporting ligand;  
 n is the oxidation state of M; and  
 x is 0 to n−1.  
 
   
   
       60 . The precursor composition of  claim 59  wherein the organic group is selected from the group consisting of an alkyl group, an aliphatic group, a cyclic group, and combinations thereof.  
   
   
       61 . The precursor composition of  claim 59  wherein L is selected from the group consisting of halides, amides, alkoxides, amidoxylates, amidinates, amidates, carboxylates, beta-diketonates, beta-imineketones, beta-diketiminates, carbonylates, ketiminates, and combinations thereof.  
   
   
       62 . A precursor composition for use in a vapor deposition process comprising at least one compound of the formula (Formula I):  
     
       
         
         
             
             
         
       
     
     wherein: 
 M is lanthanum;  
 E is XR 3  or YR 3 R 4 , wherein X is O, S, or Se, and Y is N or P;  
 each R 1 , R 2 , and R 3  is independently an organic group;  
 R 4  is hydrogen or an organic group;  
 L is an anionic supporting ligand;  
 n is the oxidation state of M; and  
 x is 0 to n−1.  
 
   
   
       63 . The precursor composition of  claim 62  wherein the organic group is selected from the group consisting of an alkyl group, an aliphatic group, a cyclic group, and combinations thereof.  
   
   
       64 . The precursor composition of  claim 62  wherein L is selected from the group consisting of halides, amides, alkoxides, amidoxylates, amidinates, amidates, carboxylates, beta-diketonates, beta-imineketones, beta-diketiminates, carbonylates, ketiminates, and combinations thereof.  
   
   
       65 . A precursor composition for use in a vapor deposition process comprising at least one compound of the formula (Formula I):  
     
       
         
         
             
             
         
       
     
     wherein: 
 M is hafnium;  
 E is XR 3  or YR 3 R 4 , wherein X is O, S, or Se, and Y is N or P;  
 R 1  and R 2  are isopropyl groups;  
 R 3  is an organic group;  
 R 4  is hydrogen or an organic group;  
 L is an anionic supporting ligand;  
 n is the oxidation state of M; and  
 x is 0 to n−1.  
 
   
   
       66 . The precursor composition of  claim 65  wherein the organic group is selected from the group consisting of an alkyl group, an aliphatic group, a cyclic group, and combinations thereof.  
   
   
       67 . The precursor composition of  claim 65  wherein L is selected from the group consisting of halides, amides, alkoxides, amidoxylates, amidinates, amidates, carboxylates, beta-diketonates, beta-imineketones, beta-diketiminates, carbonylates, ketiminates, and combinations thereof.