Heated gas feedthrough for cvd chambers

Abstract

A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

1 . A substrate processing system, comprising: 
 a gas panel comprising a first precursor source fluidly connected to a first vaporizer and a second precursor source fluidly connected to a second vaporizer;    a chemical vapor deposition chamber comprising a heated gas feedthrough comprising a wall defining a feedthrough hole; and    a line fluidly connecting the first vaporizer and the second vaporizer to the chemical vapor deposition chamber, wherein the line is configured to heat a fluid passing therethrough.    
   
   
       2 . The substrate processing system of  claim 1 , wherein the heated gas feedthrough comprises a heating jacket.  
   
   
       3 . The substrate processing system of  claim 2 , wherein the heating jacket comprises heating tape.  
   
   
       4 . The substrate processing system of  claim 2 , wherein the heating jacket comprises a cable type heater.  
   
   
       5 . The substrate processing system of  claim 1 , wherein the heated gas feedthrough comprises a thermocouple adjacent the walls defining the feedthrough hole.  
   
   
       6 . The substrate processing system of  claim 1 , wherein the chemical vapor deposition chamber further comprises a gas distribution manifold, and the heated gas feedthrough delivers precursors to the gas distribution manifold.  
   
   
       7 . The substrate processing system of  claim 6 , wherein an O-ring seal provides a sealing connection between the heated gas feedthrough and the gas distribution manifold.  
   
   
       8 . The substrate processing system of  claim 1 , wherein the first precursor source is a source of an organosilicon compound.  
   
   
       9 . The substrate processing system of  claim 1 , wherein the second precursor source is a source of a hydrocarbon compound.  
   
   
       10 . The substrate processing system of  claim 9 , wherein the hydrocarbon compound comprises at least one cyclic group.  
   
   
       11 . The substrate processing system of  claim 9 , wherein the first precursor source is a source of an organosilicon compound.  
   
   
       12 . A substrate processing system, comprising: 
 a gas panel comprising a first precursor source fluidly connected to a first vaporizer and a second precursor source fluidly connected to a second vaporizer, wherein the first precursor source is a source of an organosilicon compound, and the second precursor source is a source of a hydrocarbon compound comprising at least one cyclic group;    a chemical vapor deposition chamber comprising a heated gas feedthrough comprising a wall defining a feedthrough hole; and    a line fluidly connecting the first vaporizer and the second vaporizer to the chemical vapor deposition chamber, wherein the line is configured to heat a fluid passing therethrough.    
   
   
       13 . The substrate processing system of  claim 12 , wherein the hydrocarbon compound is alpha-terpinene.  
   
   
       14 . The substrate processing system of  claim 12 , wherein the organosilicon compound is methyldiethoxysilane.  
   
   
       15 . The substrate processing system of  claim 12 , wherein the organosilicon compound is trimethylsilane.  
   
   
       16 . The substrate processing system of  claim 12 , wherein the organosilicon compound is methyldiethoxysilane, and the hydrocarbon compound is alpha-terpinene.