Phase change memory cell defined by a pattern shrink material process

Abstract

One embodiment of the present invention provides a memory cell device. The memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern shrink material process.

1 . A memory cell device comprising: 
 a first electrode;    a phase-change material adjacent the first electrode, the phase-change material having a sublithographic width defined by a pattern shrink material process; and    a second electrode adjacent the phase-change material.    
     
     
         2 . The memory cell device of  claim 1 , wherein the pattern shrink material process comprises a SAFIER™ material process.  
     
     
         3 . The memory cell device of  claim 1 , wherein the pattern shrink material process comprises a RELACS™ material process.  
     
     
         4 . The memory cell device of  claim 1 , wherein the phase-change material comprises a chalcogenide.  
     
     
         5 . The memory cell device of  claim 1 , further comprising: 
 an isolation material adjacent the phase-change material.    
     
     
         6 . A memory cell device comprising: 
 a first electrode;    a heater adjacent the first electrode, the heater having a sublithographic width defined by a pattern shrink material process;    a phase-change material adjacent the heater; and    a second electrode adjacent the phase-change material.    
     
     
         7 . The memory cell device of  claim 6 , wherein the pattern shrink material process comprises a SAFIER™ material process.  
     
     
         8 . The memory cell device of  claim 6 , wherein the pattern shrink material process comprises a RELACS™ material process.  
     
     
         9 . The memory cell device of  claim 6 , wherein the phase-change material comprises a chalcogenide.  
     
     
         10 . The memory cell device of  claim 6 , further comprising: 
 an isolation material adjacent the heater.    
     
     
         11 . A memory device comprising: 
 a write pulse generator for generating a write pulse signal;    a sense amplifier for sensing a read signal;    a distribution circuit; and    a plurality of phase-change memory cells each capable of defining at least a first state and a second state, each memory cell further comprising phase-change material having a sublithographic width defined by a pattern shrink material process.    
     
     
         12 . The memory device of  claim 11 , wherein the pattern shrink material process comprises a SAFIER™ material process.  
     
     
         13 . The memory device of  claim 11 , wherein the pattern shrink material process comprises a RELACS™ material process.  
     
     
         14 . A memory device comprising: 
 a write pulse generator for generating a write pulse signal;    a sense amplifier for sensing a read signal;    a distribution circuit; and    a plurality of phase-change memory cells each capable of defining at least a first state and a second state, each memory cell further comprising a heater having a sublithographic width defined by a pattern shrink material process.    
     
     
         15 . The memory device of  claim 14 , wherein the pattern shrink material process comprises a SAFIER™ material process.  
     
     
         16 . The memory device of  claim 14 , wherein the pattern shrink material process comprises a RELACS™ material process.  
     
     
         17 - 38 . (canceled)  
     
     
         39 . The memory cell device of  claim 1 , wherein the phase-change material is cylindrical in shape.  
     
     
         40 . The memory cell device of  claim 6 , wherein the heater is cylindrical in shape.  
     
     
         41 . The memroy device of  claim 11 , wherein the phase-change material of each memory cell is cylindrical in shape.  
     
     
         42 . The memory device of  claim 14 , wherein the heater of each memory cell is cylindrical in shape.