Organic transistor, manufacturing method of semiconductor device and organic transistor

Abstract

It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 10 11 cm −3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

1 . A method for manufacturing a semiconductor device comprising an organic transistor, the method for manufacturing the semiconductor device comprising: 
 forming an insulating film of the organic transistor with plasma in which density of electron is 10 11  cm −3  or more and electron temperature is a range of 0.2 eV to 2.0 eV; and    forming a semiconductor layer comprising an organic semiconductor material so that the semiconductor layer is in contact with the insulating film.    
     
     
         2 . A method for manufacturing an organic transistor comprising: 
 performing plasma treatment in which density of electron is 10 11  cm −3  and electron temperature is a range of 0.2 eV to 2.0 eV to a first conductive layer to become a gate electrode to form a gate insulating film on the gate electrode;    forming a semiconductor layer comprising an organic semiconductor material so that the semiconductor layer is adjacent to the gate insulating film; and    forming a composite layer comprising an organic compound and a metal oxide so that the composite layer is adjacent to the semiconductor layer; and    forming a second conductive layer so that the second conductive layer is adjacent to the composite layer,    wherein source and the drain electrodes comprise the second conductive layer and a composite layer; and    wherein the composite layer is interposed between the conductive layer and the semiconductor layer.    
     
     
         3 . A method for manufacturing an organic transistor comprising: 
 performing plasma treatment in which density of electron is 10 11  cm −3  and electron temperature is a range of 0.5 eV to 1.5 eV to a first conductive layer to become a gate electrode to form a gate insulating film on the gate electrode;    forming a semiconductor layer comprising an organic semiconductor material so that the semiconductor layer is adjacent to the gate insulating film,    forming a composite layer comprising an organic compound and a metal oxide so that the composite layer is adjacent to the semiconductor layer; and    forming a second conductive layer so that the second conductive layer is adjacent to the composite layer,    wherein source and drain electrodes comprise the second conductive layer and the composite layer; and    wherein the composite layer is interposed between the second conductive layer and the semiconductor layer.    
     
     
         4 . A method for manufacturing an organic transistor comprising: 
 performing plasma treatment in which density of electron is 10 11  cm −3  and electron temperature is a range of 0.2 eV to 2.0 eV to a first conductive layer to become a gate electrode in order to form a gate insulating film on the gate electrode;    forming a semiconductor layer comprising an organic semiconductor material over the gate insulating film; and    forming a composite layer comprising an organic compound and a metal oxide on the semiconductor layer; and    forming a second conductive layer on the composite layer,    wherein source and drain electrodes comprises the second conductive layer and the composite layer.    
     
     
         5 . The method for manufacturing the organic transistor according to  claim 2 , wherein the gate electrode comprises one of tantalum, niobium, aluminum, molybdenum, titanium, or copper.  
     
     
         6 . The method for manufacturing the organic transistor according to  claim 3 , wherein the gate electrode comprises one of tantalum, niobium, aluminum, molybdenum, titanium, or copper.  
     
     
         7 . The method for manufacturing the organic transistor according to  claim 4 , wherein the gate electrode comprises one of tantalum, niobium, aluminum, molybdenum, titanium, or copper.  
     
     
         8 . The method for manufacturing the organic transistor according to  claim 2 , wherein the gate insulating film has dielectric constant of 8 or more.  
     
     
         9 . The method for manufacturing the organic transistor according to  claim 3 , wherein the gate insulating film has dielectric constant of 8 or more.  
     
     
         10 . The method for manufacturing the organic transistor according to  claim 4 , wherein the gate insulating film has dielectric constant of 8 or more.  
     
     
         11 . An organic transistor comprising: 
 a gate electrode;    a gate insulating film adjacent to the gate electrode;    a semiconductor layer comprising an organic semiconductor material adjacent to the gate insulating film; and    a source and a drain electrodes adjacent to the semiconductor layer,    wherein the source and drain electrodes comprise a composite layer and the conductive layer, the composite layer comprising an organic compound and a metal oxide;    wherein the composite layer is interposed between the conductive layer and the semiconductor layer; and    wherein the gate insulating film is subject to plasma treatment.    
     
     
         12 . The method for manufacturing the organic transistor according to  claim 2 , wherein the organic compound comprises an aromatic amine skeleton.  
     
     
         13 . The method for manufacturing the organic transistor according to  claim 3 , wherein the organic compound comprises an aromatic amine skeleton.  
     
     
         14 . The method for manufacturing the organic transistor according to  claim 4 , wherein the organic compound comprises an aromatic amine skeleton.  
     
     
         15 . The organic transistor according to  claim 11 , wherein the organic compound has an aromatic amine skeleton.  
     
     
         16 . The method for manufacturing the organic transistor according to  claim 2 , wherein the metal oxide is one or a plurality of oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.  
     
     
         17 . The method for manufacturing the organic transistor according to  claim 3 , wherein the metal oxide is one or a plurality of oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.  
     
     
         18 . The method for manufacturing the organic transistor according to  claim 4 , wherein the metal oxide is one or a plurality of oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.  
     
     
         19 . The organic transistor according to  claim 11 , wherein the metal oxide is one or a plurality of oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.  
     
     
         20 . A method for manufacturing an organic transistor comprising: 
 forming a first conductive layer over a substrate;    insulating a surface of the first conductive layer by plasma treatment in which density of electron is 10 11  cm −3  and electron temperature is a range of 0.2 eV to 2.0 eV;    forming a semiconductor layer comprising an organic semiconductor material over the insulated first conductive layer;    forming a composite layer in which an organic compound and a metal oxide are mixed over the semiconductor layer; and    forming a second conductive layer over the composite layer,    wherein the composite layer and the second conductive layer are source and drain electrodes,    wherein a portion having a conductive property of the first conductive layer is a gate electrode; and    wherein a portion having an insulating property of the first conductive layer is a gate insulating film.    
     
     
         21 . The method for manufacturing the organic transistor according to  claim 20 , wherein the gate electrode is one of tantalum, niobium, aluminum, molybdenum, titanium, and copper.  
     
     
         22 . The method for manufacturing the organic transistor according to  claim 20 , wherein the gate insulating film has dielectric constant of 8 or more.  
     
     
         23 . A method for manufacturing the organic transistor comprising: 
 forming a gate electrode over a substrate;    forming a gate insulating film over the gate electrode;    forming a semiconductor layer including an organic semiconductor material over the gate insulating film;    forming a composite layer in which an organic compound and a metal oxide are mixed over the semiconductor layer; and    forming a conductive layer over the composite layer,    wherein the composite layer and the conductive layer are a source and a drain electrodes, and    wherein the gate insulating film is subjected to plasma treatment in which density of electron is 10 11  cm −3  and electron temperature is a range of 0.2 eV to 2.0 eV.    
     
     
         24 . The method for manufacturing the organic transistor according to  claim 20 , wherein the organic compound comprises an aromatic amine skeleton.  
     
     
         25 . The method for manufacturing the organic transistor according to  claim 23 , wherein the organic compound comprises an aromatic amine skeleton.  
     
     
         26 . The method for manufacturing the organic transistor according to  claim 20 , wherein the metal oxide is one or a plurality of oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.  
     
     
         27 . The method for manufacturing the organic transistor according to  claim 23 , wherein the metal oxide is one or a plurality of oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.